Gap states and edge properties of rectangular graphene quantum dot in staggered potential

Y. H. Jeong, S. R. Eric Yang

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    We investigate edge properties of a gapful rectangular graphene quantum dot in a staggered potential. In such a system gap states with discrete and closely spaced energy levels exist that are spatially located on the left or right zigzag edge. We find that, although the bulk states outside the energy gap are nearly unaffected, spin degeneracy of each gap state is lifted by the staggered potential. We have computed the occupation numbers of spin-up and -down gap states at various values of the strength of the staggered potential. The electronic and magnetic properties of the zigzag edges depend sensitively on these numbers. We discuss the possibility of applying this system as a single electron spintronic device.

    Original languageEnglish
    Pages (from-to)283-288
    Number of pages6
    JournalJournal of the Korean Physical Society
    Volume71
    Issue number5
    DOIs
    Publication statusPublished - 2017 Sept 1

    Bibliographical note

    Funding Information:
    This research was supported by Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education, ICT & Future Planning(MSIP) (NRF-2015R1D1A1A01056809).

    Publisher Copyright:
    © 2017, The Korean Physical Society.

    Keywords

    • Edge reconstruction
    • Gap states
    • Graphene quantum dot
    • Staggered potential

    ASJC Scopus subject areas

    • General Physics and Astronomy

    Fingerprint

    Dive into the research topics of 'Gap states and edge properties of rectangular graphene quantum dot in staggered potential'. Together they form a unique fingerprint.

    Cite this