GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

Sang Hoon Shin; Youn Ho Park; Hyun Cheol Koo; Yun Heub Song; Jin Dong Song

doi:10.1016/j.cap.2017.03.018

GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

Sang Hoon Shin, Youn Ho Park, Hyun Cheol Koo, Yun Heub Song, Jin Dong Song

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm²/Vs and high carrier concentration of 4.3 × 10¹²/cm² at RT.

Original language	English
Pages (from-to)	1005-1008
Number of pages	4
Journal	Current Applied Physics
Volume	17
Issue number	7
DOIs	https://doi.org/10.1016/j.cap.2017.03.018
Publication status	Published - 2017 Jul 1

Bibliographical note

Funding Information:
JDS acknowledges support from the KIST institutional program of flag-ship (2E27160).

Publisher Copyright:
© 2017

Keywords

2DHG
GaSb
Hole mobility
III-V CMOS
Lattice mismatch

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2017.03.018

Cite this

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title = "GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications",

abstract = "We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.",

keywords = "2DHG, GaSb, Hole mobility, III-V CMOS, Lattice mismatch",

author = "Shin, {Sang Hoon} and Park, {Youn Ho} and Koo, {Hyun Cheol} and Song, {Yun Heub} and Song, {Jin Dong}",

note = "Funding Information: JDS acknowledges support from the KIST institutional program of flag-ship (2E27160). Publisher Copyright: {\textcopyright} 2017",

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doi = "10.1016/j.cap.2017.03.018",

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T1 - GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

AU - Shin, Sang Hoon

AU - Park, Youn Ho

AU - Koo, Hyun Cheol

AU - Song, Yun Heub

AU - Song, Jin Dong

PY - 2017/7/1

Y1 - 2017/7/1

N2 - We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.

AB - We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.

KW - 2DHG

KW - GaSb

KW - Hole mobility

KW - III-V CMOS

KW - Lattice mismatch

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DO - 10.1016/j.cap.2017.03.018

M3 - Article

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SN - 1567-1739

VL - 17

SP - 1005

EP - 1008

JO - Current Applied Physics

JF - Current Applied Physics

IS - 7

ER -

GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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