We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.
Bibliographical noteFunding Information:
JDS acknowledges support from the KIST institutional program of flag-ship (2E27160).
- Hole mobility
- III-V CMOS
- Lattice mismatch
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)