GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

Sang Hoon Shin, Youn Ho Park, Hyun Cheol Koo, Yun Heub Song, Jin Dong Song

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT.

Original languageEnglish
Pages (from-to)1005-1008
Number of pages4
JournalCurrent Applied Physics
Issue number7
Publication statusPublished - 2017 Jul 1

Bibliographical note

Funding Information:
JDS acknowledges support from the KIST institutional program of flag-ship (2E27160).

Publisher Copyright:
© 2017


  • 2DHG
  • GaSb
  • Hole mobility
  • Lattice mismatch

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


Dive into the research topics of 'GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications'. Together they form a unique fingerprint.

Cite this