Ga2O3 nanobelt devices

Janghyuk Kim, Sooyeoun Oh, Suhyun Kim, Jihyun Kim

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)


In this chapter, we consider the preparation of β-Ga2O3 nanobelts and the fabrication of various types of devices using these β-Ga2O3 nanobelts. The β-Ga2O3 nanobelts are synthesized using different bottom-up methods or prepared by top-down methods such as mechanical exfoliation. Since β-Ga2O3 nanobelts inherit the properties of single-crystal β-Ga2O3 and can be easily integrated with other materials, β-Ga2O3 nanobelt is suitable for optoelectronic nanodevices. The β-Ga2O3 nanobelt-based solar-blind photodetectors exhibit the outstanding device performance due to its high crystallinity as well as high surface-to-volume ratio. For power devices, the heat management problem of β-Ga2O3 is expected to be solved by combining nanobelts with high thermal conductivity materials. The recent progress of β-Ga2O3 nanobelt-based solar-blind photodetectors and high-power transistors are discussed.

Original languageEnglish
Title of host publicationGallium Oxide
Subtitle of host publicationTechnology, Devices and Applications
Number of pages38
ISBN (Electronic)9780128145227
ISBN (Print)9780128145210
Publication statusPublished - 2018 Oct 26


  • High power transistor
  • Mechanical exfoliation
  • Nanodevice
  • Solar-blind photodetector
  • β-GaO nanobelt

ASJC Scopus subject areas

  • Engineering(all)


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