Ga₂O₃ nanobelt devices

In this chapter, we consider the preparation of β-Ga₂O₃ nanobelts and the fabrication of various types of devices using these β-Ga₂O₃ nanobelts. The β-Ga₂O₃ nanobelts are synthesized using different bottom-up methods or prepared by top-down methods such as mechanical exfoliation. Since β-Ga₂O₃ nanobelts inherit the properties of single-crystal β-Ga₂O₃ and can be easily integrated with other materials, β-Ga₂O₃ nanobelt is suitable for optoelectronic nanodevices. The β-Ga₂O₃ nanobelt-based solar-blind photodetectors exhibit the outstanding device performance due to its high crystallinity as well as high surface-to-volume ratio. For power devices, the heat management problem of β-Ga₂O₃ is expected to be solved by combining nanobelts with high thermal conductivity materials. The recent progress of β-Ga₂O₃ nanobelt-based solar-blind photodetectors and high-power transistors are discussed.