Ga2O3 nanomaterials synthesized from ball-milled GaN powders

Jong Soo Lee, Kwangsue Park, Sahn Nahm, Soo Won Kim, Sangsig Kim

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61 Citations (Scopus)


Ga2O3 nanomaterials were synthesized from mechanically ground GaN powders with thermal annealing; Ga2O3 nanobelts were formed in a nitrogen atmosphere, while Ga2O3 nanoparticles were formed in an oxygen atmosphere. The structural properties of the Ga2O3 nanomaterials were investigated by X-ray diffractometer (XRD) and high-resolution transmission electron microscope (HRTEM). The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts are in the range of about 10-200nm width and 10-50nm thickness, and that nanoparticles are in the range of about 20-50nm radius. On the basis of XRD and HRTEM data, we determined that the nanobelts grow toward a direction perpendicular to the (0 1 0) lattice plane and that they are enclosed by facets of the (1 0 1̄) and (1 0 1) lattice planes. The formation of the nanobelts may be described by the vapor-solid (VS) mechanism, and the supersaturation degree of gaseous phase may play an important role in the formation of Ga2O3 nanomaterials.

Original languageEnglish
Pages (from-to)287-295
Number of pages9
JournalJournal of Crystal Growth
Issue number3-4
Publication statusPublished - 2002 Oct

Bibliographical note

Funding Information:
This work was supported by Korean Ministry of Science and Technology as a part of the ’01 Nuclear R&D Program.


  • A1. Mechanical grinding
  • A1. Nanobelts
  • A1. Nanoparticles
  • A1. Thermal annealing
  • B1. GaN powders
  • B1. Oxides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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