Ga2O3:ITO transparent conducting electrodes for near-ultraviolet light-emitting diodes

Su Jin Kim; Sang Young Park; Kyeong Heon Kim; Suk Won Kim; Tae Geun Kim

doi:10.1109/LED.2013.2292080

Ga₂O₃:ITO transparent conducting electrodes for near-ultraviolet light-emitting diodes

Su Jin Kim, Sang Young Park, Kyeong Heon Kim, Suk Won Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Herein, a Ga₂O₃-based indium tin oxide Ga ₂O₃ITO thin film is proposed as a replacement for ITO in near-ultraviolet light-emitting diodes (NUV LEDs), and its electrical and optical properties are optimized. The measured sheet resistance and optical transmittance of the Ga₂O₃ITO thin film were 49 Ω sq and 93.8% at 405 nm wavelength after optimization, whereas those of ITO films were 52 Ω sq and 84.4% at that wavelength, respectively. In addition, we found that at 20 mA the output power of the NUV LEDs with Ga₂O ₃:ITO top electrodes was 55% greater than that of those with ITO top electrodes.

Original language	English
Article number	6698329
Pages (from-to)	232-234
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	2
DOIs	https://doi.org/10.1109/LED.2013.2292080
Publication status	Published - 2014 Feb

Keywords

GaO:ITO
Ultraviolet light-emitting diode
cosputtering
transparent conducting electrode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2013.2292080

Cite this

@article{eb91b6d0c73b4f3188226b3c8bece8f5,

title = "Ga2O3:ITO transparent conducting electrodes for near-ultraviolet light-emitting diodes",

abstract = "Herein, a Ga2O3-based indium tin oxide Ga 2O3ITO thin film is proposed as a replacement for ITO in near-ultraviolet light-emitting diodes (NUV LEDs), and its electrical and optical properties are optimized. The measured sheet resistance and optical transmittance of the Ga2O3ITO thin film were 49 Ω sq and 93.8% at 405 nm wavelength after optimization, whereas those of ITO films were 52 Ω sq and 84.4% at that wavelength, respectively. In addition, we found that at 20 mA the output power of the NUV LEDs with Ga2O 3:ITO top electrodes was 55% greater than that of those with ITO top electrodes.",

keywords = "GaO:ITO, Ultraviolet light-emitting diode, cosputtering, transparent conducting electrode",

author = "Kim, {Su Jin} and Park, {Sang Young} and Kim, {Kyeong Heon} and Kim, {Suk Won} and Kim, {Tae Geun}",

year = "2014",

month = feb,

doi = "10.1109/LED.2013.2292080",

language = "English",

volume = "35",

pages = "232--234",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Ga2O3:ITO transparent conducting electrodes for near-ultraviolet light-emitting diodes

AU - Kim, Su Jin

AU - Park, Sang Young

AU - Kim, Kyeong Heon

AU - Kim, Suk Won

AU - Kim, Tae Geun

PY - 2014/2

Y1 - 2014/2

N2 - Herein, a Ga2O3-based indium tin oxide Ga 2O3ITO thin film is proposed as a replacement for ITO in near-ultraviolet light-emitting diodes (NUV LEDs), and its electrical and optical properties are optimized. The measured sheet resistance and optical transmittance of the Ga2O3ITO thin film were 49 Ω sq and 93.8% at 405 nm wavelength after optimization, whereas those of ITO films were 52 Ω sq and 84.4% at that wavelength, respectively. In addition, we found that at 20 mA the output power of the NUV LEDs with Ga2O 3:ITO top electrodes was 55% greater than that of those with ITO top electrodes.

AB - Herein, a Ga2O3-based indium tin oxide Ga 2O3ITO thin film is proposed as a replacement for ITO in near-ultraviolet light-emitting diodes (NUV LEDs), and its electrical and optical properties are optimized. The measured sheet resistance and optical transmittance of the Ga2O3ITO thin film were 49 Ω sq and 93.8% at 405 nm wavelength after optimization, whereas those of ITO films were 52 Ω sq and 84.4% at that wavelength, respectively. In addition, we found that at 20 mA the output power of the NUV LEDs with Ga2O 3:ITO top electrodes was 55% greater than that of those with ITO top electrodes.

KW - GaO:ITO

KW - Ultraviolet light-emitting diode

KW - cosputtering

KW - transparent conducting electrode

UR - http://www.scopus.com/inward/record.url?scp=84893878287&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2292080

DO - 10.1109/LED.2013.2292080

M3 - Article

AN - SCOPUS:84893878287

SN - 0741-3106

VL - 35

SP - 232

EP - 234

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 6698329

ER -