Gate all around metal oxide field transistor: Surface potential calculation method including doping and interface trap charge and the effect of interface trap charge on subthreshold slope

Faraz Najam; Sangsig Kim; Yun Seop Yu

doi:10.5573/JSTS.2013.13.5.530

Gate all around metal oxide field transistor: Surface potential calculation method including doping and interface trap charge and the effect of interface trap charge on subthreshold slope

Faraz Najam, Sangsig Kim, Yun Seop Yu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

Original language	English
Pages (from-to)	530-537
Number of pages	8
Journal	Journal of Semiconductor Technology and Science
Volume	13
Issue number	5
DOIs	https://doi.org/10.5573/JSTS.2013.13.5.530
Publication status	Published - 2013 Oct

Keywords

Compact model
Drain-source current
Gate-all-around metal-oxide-semiconductor-field-effect-transistor (GAAMOSFET)
Interface trap distribution
Scaling theory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.5573/JSTS.2013.13.5.530

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Gate all around metal oxide field transistor: Surface potential calculation method including doping and interface trap charge and the effect of interface trap charge on subthreshold slope. / Najam, Faraz; Kim, Sangsig; Yu, Yun Seop.
In: Journal of Semiconductor Technology and Science, Vol. 13, No. 5, 10.2013, p. 530-537.

Research output: Contribution to journal › Article › peer-review

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Gate all around metal oxide field transistor: Surface potential calculation method including doping and interface trap charge and the effect of interface trap charge on subthreshold slope

Abstract

Keywords

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