Abstract
Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 °C and characterized the produced devices consisting of a p +-Si contact electrode, a suspended Si nanochannel, and a polysilicon contact electrode. Both the electrodes and connecting lines are made of Si-based materials by conventional low-pressure chemical vapor deposition. The results indicate that these devices can act as gate-controllable Schottky diodes in integrated nanocircuits.
Original language | English |
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Article number | 065004 |
Journal | Science and Technology of Advanced Materials |
Volume | 12 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2011 Dec |
Keywords
- LPCVD
- Si nanowires
- low-pressure chemical vapor deposition
- nanowire junction
ASJC Scopus subject areas
- Materials Science(all)