Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures

Kyung Ho Kim, Youn Ho Park, Hyun Cheol Koo, Joonyeon Chang, Young Keun Kim, Hyung Jun Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (α) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of α in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of α directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.

Original languageEnglish
Pages (from-to)5212-5215
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number7
Publication statusPublished - 2014 Jul


  • Quantum Well
  • Rashba Effect
  • Spin-Field Effect Transistor
  • Spin-Orbit Coupling

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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