Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures

Kyung Ho Kim; Youn Ho Park; Hyun Cheol Koo; Joonyeon Chang; Young Keun Kim; Hyung Jun Kim

doi:10.1166/jnn.2014.8464

Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures

Kyung Ho Kim
, Youn Ho Park
, Hyun Cheol Koo
, Joonyeon Chang
, Young Keun Kim
, Hyung Jun Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (α) in In_0.53Ga_0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of α in the InAs-inserted QW has been observed compared to the In_0.53Ga_0.47As QW. The enhanced gate controllability of α directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.

Original language	English
Pages (from-to)	5212-5215
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	7
DOIs	https://doi.org/10.1166/jnn.2014.8464
Publication status	Published - 2014 Jul

Keywords

Quantum Well
Rashba Effect
Spin-Field Effect Transistor
Spin-Orbit Coupling

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

Access to Document

10.1166/jnn.2014.8464

Cite this

@article{11df30164b1f49318382de7a2e32741f,

title = "Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures",

abstract = "We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (α) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of α in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of α directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.",

keywords = "Quantum Well, Rashba Effect, Spin-Field Effect Transistor, Spin-Orbit Coupling",

author = "Kim, \{Kyung Ho\} and Park, \{Youn Ho\} and Koo, \{Hyun Cheol\} and Joonyeon Chang and Kim, \{Young Keun\} and Kim, \{Hyung Jun\}",

year = "2014",

month = jul,

doi = "10.1166/jnn.2014.8464",

language = "English",

volume = "14",

pages = "5212--5215",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "7",

}

TY - JOUR

T1 - Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures

AU - Kim, Kyung Ho

AU - Park, Youn Ho

AU - Koo, Hyun Cheol

AU - Chang, Joonyeon

AU - Kim, Young Keun

AU - Kim, Hyung Jun

PY - 2014/7

Y1 - 2014/7

N2 - We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (α) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of α in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of α directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.

AB - We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (α) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of α in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of α directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.

KW - Quantum Well

KW - Rashba Effect

KW - Spin-Field Effect Transistor

KW - Spin-Orbit Coupling

UR - https://www.scopus.com/pages/publications/84903836814

U2 - 10.1166/jnn.2014.8464

DO - 10.1166/jnn.2014.8464

M3 - Article

AN - SCOPUS:84903836814

SN - 1533-4880

VL - 14

SP - 5212

EP - 5215

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 7

ER -

Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this