Gate-controlled spin-orbit interaction in InAs high-electron mobility transistor layers epitaxially transferred onto Si substrates

Kyung Ho Kim, Doo Seung Um, Hochan Lee, Seongdong Lim, Joonyeon Chang, Hyun Cheol Koo, Min Wook Oh, Hyunhyub Ko, Hyung Jun Kim

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm2/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (α) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the α value increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations indicate that the main causes of the large improvement in α are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented in this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology.

Original languageEnglish
Pages (from-to)9106-9114
Number of pages9
JournalACS nano
Issue number10
Publication statusPublished - 2013 Oct 22


  • epitaxial transfer
  • high-electron mobility transistor
  • selective wet-etching
  • spin field-effect transistor
  • spin-orbit interaction

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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