Gate-controlled spin-orbit interaction in InAs high-electron mobility transistor layers epitaxially transferred onto Si substrates

  • Kyung Ho Kim
  • , Doo Seung Um
  • , Hochan Lee
  • , Seongdong Lim
  • , Joonyeon Chang
  • , Hyun Cheol Koo
  • , Min Wook Oh
  • , Hyunhyub Ko*
  • , Hyung Jun Kim
    • *Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

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