Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

Wang Taek Hwang; Misook Min; Hyunhak Jeong; Dongku Kim; Jingon Jang; Daekyung Yoo; Yeonsik Jang; Jun Woo Kim; Jiyoung Yoon; Seungjun Chung; Gyu Chul Yi; Hyoyoung Lee; Gunuk Wang; Takhee Lee

doi:10.1088/0957-4484/27/47/475201

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

Wang Taek Hwang, Misook Min, Hyunhak Jeong, Dongku Kim, Jingon Jang, Daekyung Yoo, Yeonsik Jang, Jun Woo Kim, Jiyoung Yoon, Seungjun Chung, Gyu Chul Yi, Hyoyoung Lee, Gunuk Wang, Takhee Lee

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

Original language	English
Article number	475201
Journal	Nanotechnology
Volume	27
Issue number	47
DOIs	https://doi.org/10.1088/0957-4484/27/47/475201
Publication status	Published - 2016 Oct 21

Keywords

Poole-Frenkel conduction
barristor
grapheme
pentacene
thermionic emission

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes",

abstract = "We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.",

keywords = "Poole-Frenkel conduction, barristor, grapheme, pentacene, thermionic emission",

author = "Hwang, {Wang Taek} and Misook Min and Hyunhak Jeong and Dongku Kim and Jingon Jang and Daekyung Yoo and Yeonsik Jang and Kim, {Jun Woo} and Jiyoung Yoon and Seungjun Chung and Yi, {Gyu Chul} and Hyoyoung Lee and Gunuk Wang and Takhee Lee",

note = "Funding Information: This study was achieved through support from the National Creative Research Laboratory Program (grant no. 2012026372) provided by the National Research Foundation of Korea (NRF), funded by the Korean Ministry of Science, ICT and Future Planning. G-CY and JY thank the financial support from the Global Research Laboratory Program of the National Research Foundation of Korea (grant no. NRF- 2015K1A1A2033332) and Research Institute of Advanced Materials (RIAM) of Seoul National University. Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

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doi = "10.1088/0957-4484/27/47/475201",

language = "English",

volume = "27",

journal = "Nanotechnology",

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TY - JOUR

T1 - Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

AU - Hwang, Wang Taek

AU - Min, Misook

AU - Jeong, Hyunhak

AU - Kim, Dongku

AU - Jang, Jingon

AU - Yoo, Daekyung

AU - Jang, Yeonsik

AU - Kim, Jun Woo

AU - Yoon, Jiyoung

AU - Chung, Seungjun

AU - Yi, Gyu Chul

AU - Lee, Hyoyoung

AU - Wang, Gunuk

AU - Lee, Takhee

N1 - Funding Information: This study was achieved through support from the National Creative Research Laboratory Program (grant no. 2012026372) provided by the National Research Foundation of Korea (NRF), funded by the Korean Ministry of Science, ICT and Future Planning. G-CY and JY thank the financial support from the Global Research Laboratory Program of the National Research Foundation of Korea (grant no. NRF- 2015K1A1A2033332) and Research Institute of Advanced Materials (RIAM) of Seoul National University. Publisher Copyright: © 2016 IOP Publishing Ltd.

PY - 2016/10/21

Y1 - 2016/10/21

N2 - We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

AB - We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

KW - Poole-Frenkel conduction

KW - barristor

KW - grapheme

KW - pentacene

KW - thermionic emission

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VL - 27

JO - Nanotechnology

JF - Nanotechnology

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ER -

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

Abstract

Keywords

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