Abstract
We present the gate-dependent photoconductivity measurements of single layer graphene ribbons grafted with zinc porphyrin molecules Zn(OEP). The Zn(OEP)-graphene showed a maximum 610 increase in its photo-sensitivity compared to the bare graphene samples. Furthermore, the measured photocurrent exhibited strong dependence on the gate bias, light power, and light wavelength. These dependences showed clear evidence of the excitation of the carriers in Zn(OEP) and their energy transfer to graphene.
Original language | English |
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Article number | 163116 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2012 Apr 16 |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-0000427).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)