Gate modulation of spin precession in a semiconductor channel

Hyun Cheol Koo; Jae Hyun Kwon; Jonghwa Eom; Joonyeon Chang; Suk Hee Han; Mark Johnson

doi:10.1088/0022-3727/44/6/064006

Gate modulation of spin precession in a semiconductor channel

Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han, Mark Johnson

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Gate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin-orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength.

Original language	English
Article number	064006
Journal	Journal of Physics D: Applied Physics
Volume	44
Issue number	6
DOIs	https://doi.org/10.1088/0022-3727/44/6/064006
Publication status	Published - 2011 Feb 16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/44/6/064006

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@article{fb6e4ac0ff764181bf46dba7253d7426,

title = "Gate modulation of spin precession in a semiconductor channel",

abstract = "Gate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin-orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength.",

author = "Koo, {Hyun Cheol} and Kwon, {Jae Hyun} and Jonghwa Eom and Joonyeon Chang and Han, {Suk Hee} and Mark Johnson",

year = "2011",

month = feb,

day = "16",

doi = "10.1088/0022-3727/44/6/064006",

language = "English",

volume = "44",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Gate modulation of spin precession in a semiconductor channel

AU - Koo, Hyun Cheol

AU - Kwon, Jae Hyun

AU - Eom, Jonghwa

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Johnson, Mark

PY - 2011/2/16

Y1 - 2011/2/16

N2 - Gate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin-orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength.

AB - Gate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin-orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength.

UR - http://www.scopus.com/inward/record.url?scp=79551704633&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/44/6/064006

DO - 10.1088/0022-3727/44/6/064006

M3 - Article

AN - SCOPUS:79551704633

SN - 0022-3727

VL - 44

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 6

M1 - 064006

ER -

Gate modulation of spin precession in a semiconductor channel

Abstract

ASJC Scopus subject areas

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