Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device

Youn Ho Park; Sang Hoon Shin; Jin Dong Song; Joonyeon Chang; Suk Hee Han; Heon Jin Choi; Hyun Cheol Koo

doi:10.1016/j.sse.2013.01.016

Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device

Youn Ho Park, Sang Hoon Shin, Jin Dong Song, Joonyeon Chang, Suk Hee Han, Heon Jin Choi, Hyun Cheol Koo

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov-de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin-orbit interaction parameter of 1.71 × 10^-11 eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin.

Original language	English
Pages (from-to)	34-37
Number of pages	4
Journal	Solid-State Electronics
Volume	82
DOIs	https://doi.org/10.1016/j.sse.2013.01.016
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2012-0005631) and the KIST Institutional Programs including Dream Project.

Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.

Keywords

Complementary device
GaSb p-type quantum well
Rashba effect
Spin transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2013.01.016

Cite this

@article{c0388c7981d24033a8a1da1f52d1468e,

title = "Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device",

abstract = "The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov-de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin-orbit interaction parameter of 1.71 × 10-11 eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin.",

keywords = "Complementary device, GaSb p-type quantum well, Rashba effect, Spin transistor",

author = "Park, {Youn Ho} and Shin, {Sang Hoon} and Song, {Jin Dong} and Joonyeon Chang and Han, {Suk Hee} and Choi, {Heon Jin} and Koo, {Hyun Cheol}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2012-0005631) and the KIST Institutional Programs including Dream Project. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.",

year = "2013",

doi = "10.1016/j.sse.2013.01.016",

language = "English",

volume = "82",

pages = "34--37",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device

AU - Park, Youn Ho

AU - Shin, Sang Hoon

AU - Song, Jin Dong

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Choi, Heon Jin

AU - Koo, Hyun Cheol

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2012-0005631) and the KIST Institutional Programs including Dream Project. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.

PY - 2013

Y1 - 2013

N2 - The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov-de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin-orbit interaction parameter of 1.71 × 10-11 eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin.

AB - The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov-de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin-orbit interaction parameter of 1.71 × 10-11 eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin.

KW - Complementary device

KW - GaSb p-type quantum well

KW - Rashba effect

KW - Spin transistor

UR - http://www.scopus.com/inward/record.url?scp=84874674025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874674025&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2013.01.016

DO - 10.1016/j.sse.2013.01.016

M3 - Article

AN - SCOPUS:84874674025

SN - 0038-1101

VL - 82

SP - 34

EP - 37

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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