Gated FEAs using directly grown carbon nanotubes by the rapid thermal CVD method

Yoon Taek Jang; Yun Hi Lee; Chang Hoon Choi; Byeong Kwon Ju; Jin Ho Ahn

Gated FEAs using directly grown carbon nanotubes by the rapid thermal CVD method

Yoon Taek Jang, Yun Hi Lee, Chang Hoon Choi, Byeong Kwon Ju, Jin Ho Ahn

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We fabricate the spindt-type gated FEAs using directly grown CNTs. Their electron emission properties and light-emitting characteristics will be presented. In order to realize better functions of gated FEAs using CNTs directly grown into the submicron-holes, we investigate freestanding CNTs grown on each micron-sized Co dot without disturbing neighboring patterns by Thermal CVD.

Original language	English
Pages (from-to)	1241-1244
Number of pages	4
Journal	SID Conference Record of the International Display Research Conference
Publication status	Published - 2001
Event	Asia Display/IDW 2001 - Nagoya, Japan Duration: 2002 Oct 16 → 2002 Oct 19

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Gated FEAs using directly grown carbon nanotubes by the rapid thermal CVD method",

abstract = "We fabricate the spindt-type gated FEAs using directly grown CNTs. Their electron emission properties and light-emitting characteristics will be presented. In order to realize better functions of gated FEAs using CNTs directly grown into the submicron-holes, we investigate freestanding CNTs grown on each micron-sized Co dot without disturbing neighboring patterns by Thermal CVD.",

author = "Jang, {Yoon Taek} and Lee, {Yun Hi} and Choi, {Chang Hoon} and Ju, {Byeong Kwon} and Ahn, {Jin Ho}",

year = "2001",

language = "English",

pages = "1241--1244",

journal = "SID Conference Record of the International Display Research Conference",

issn = "1083-1312",

publisher = "Society for Information Display",

note = "Asia Display/IDW 2001 ; Conference date: 16-10-2002 Through 19-10-2002",

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TY - JOUR

T1 - Gated FEAs using directly grown carbon nanotubes by the rapid thermal CVD method

AU - Jang, Yoon Taek

AU - Lee, Yun Hi

AU - Choi, Chang Hoon

AU - Ju, Byeong Kwon

AU - Ahn, Jin Ho

PY - 2001

Y1 - 2001

N2 - We fabricate the spindt-type gated FEAs using directly grown CNTs. Their electron emission properties and light-emitting characteristics will be presented. In order to realize better functions of gated FEAs using CNTs directly grown into the submicron-holes, we investigate freestanding CNTs grown on each micron-sized Co dot without disturbing neighboring patterns by Thermal CVD.

AB - We fabricate the spindt-type gated FEAs using directly grown CNTs. Their electron emission properties and light-emitting characteristics will be presented. In order to realize better functions of gated FEAs using CNTs directly grown into the submicron-holes, we investigate freestanding CNTs grown on each micron-sized Co dot without disturbing neighboring patterns by Thermal CVD.

UR - http://www.scopus.com/inward/record.url?scp=0035782803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035782803&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035782803

SN - 1083-1312

SP - 1241

EP - 1244

JO - SID Conference Record of the International Display Research Conference

JF - SID Conference Record of the International Display Research Conference

T2 - Asia Display/IDW 2001

Y2 - 16 October 2002 through 19 October 2002

ER -

Gated FEAs using directly grown carbon nanotubes by the rapid thermal CVD method

Abstract

ASJC Scopus subject areas

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