Abstract
We fabricate the spindt-type gated FEAs using directly grown CNTs. Their electron emission properties and light-emitting characteristics will be presented. In order to realize better functions of gated FEAs using CNTs directly grown into the submicron-holes, we investigate freestanding CNTs grown on each micron-sized Co dot without disturbing neighboring patterns by Thermal CVD.
| Original language | English |
|---|---|
| Pages (from-to) | 1241-1244 |
| Number of pages | 4 |
| Journal | SID Conference Record of the International Display Research Conference |
| Publication status | Published - 2001 |
| Event | Asia Display/IDW 2001 - Nagoya, Japan Duration: 2002 Oct 16 → 2002 Oct 19 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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