GaZnO as a transparent electrode to silicon carbide

Jung Ho Lee; Ji Hong Kim; Kang Min Do; Byung Moo Moon; Sung Jae Joo; Wook Bahng; Sang Cheol Kim; Nam Kyun Kim; Sang Mo Koo

doi:10.4028/www.scientific.net/MSF.717-720.849

GaZnO as a transparent electrode to silicon carbide

Jung Ho Lee, Ji Hong Kim, Kang Min Do, Byung Moo Moon, Sung Jae Joo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, Sang Mo Koo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (T_S∼250 to 550°C) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 °C, whereas the lowest resistivity (∼3.3 × 10 ^-4 Ωcm) and highest carrier concentration (∼1. 33×10²¹cm^-3) values are observed for the GaZnO films deposited at 400 °C. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga³⁺ ions may affect the electrical properties of GaZnO films on SiC.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2011, ICSCRM 2011
Editors	Robert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
Publisher	Trans Tech Publications Ltd
Pages	849-852
Number of pages	4
ISBN (Print)	9783037854198
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.717-720.849
Publication status	Published - 2012
Event	14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States Duration: 2011 Sept 11 → 2011 Sept 16

Publication series

Name	Materials Science Forum
Volume	717-720
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
Country/Territory	United States
City	Cleveland, OH
Period	11/9/11 → 11/9/16

Keywords

GaZnO
SiC
Transparent electrode

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/MSF.717-720.849

Cite this

Lee, J. H., Kim, J. H., Do, K. M., Moon, B. M., Joo, S. J., Bahng, W., Kim, S. C., Kim, N. K., & Koo, S. M. (2012). GaZnO as a transparent electrode to silicon carbide. In R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (Eds.), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 849-852). (Materials Science Forum; Vol. 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.849

GaZnO as a transparent electrode to silicon carbide. / Lee, Jung Ho; Kim, Ji Hong; Do, Kang Min et al.
Silicon Carbide and Related Materials 2011, ICSCRM 2011. ed. / Robert P. Devaty; Michael Dudley; T. Paul Chow; Philip G. Neudeck. Trans Tech Publications Ltd, 2012. p. 849-852 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, JH, Kim, JH, Do, KM, Moon, BM, Joo, SJ, Bahng, W, Kim, SC, Kim, NK & Koo, SM 2012, GaZnO as a transparent electrode to silicon carbide. in RP Devaty, M Dudley, TP Chow & PG Neudeck (eds), Silicon Carbide and Related Materials 2011, ICSCRM 2011. Materials Science Forum, vol. 717-720, Trans Tech Publications Ltd, pp. 849-852, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 11/9/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.849

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abstract = "The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS∼250 to 550°C) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 °C, whereas the lowest resistivity (∼3.3 × 10 -4 Ωcm) and highest carrier concentration (∼1. 33×1021cm-3) values are observed for the GaZnO films deposited at 400 °C. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions may affect the electrical properties of GaZnO films on SiC.",

keywords = "GaZnO, SiC, Transparent electrode",

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AU - Do, Kang Min

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AU - Kim, Sang Cheol

AU - Kim, Nam Kyun

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N2 - The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS∼250 to 550°C) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 °C, whereas the lowest resistivity (∼3.3 × 10 -4 Ωcm) and highest carrier concentration (∼1. 33×1021cm-3) values are observed for the GaZnO films deposited at 400 °C. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions may affect the electrical properties of GaZnO films on SiC.

AB - The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS∼250 to 550°C) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 °C, whereas the lowest resistivity (∼3.3 × 10 -4 Ωcm) and highest carrier concentration (∼1. 33×1021cm-3) values are observed for the GaZnO films deposited at 400 °C. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions may affect the electrical properties of GaZnO films on SiC.

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GaZnO as a transparent electrode to silicon carbide

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Keywords

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