@inproceedings{25419356f64b424baba13e9999df60fd,
title = "GaZnO as a transparent electrode to silicon carbide",
abstract = "The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS∼250 to 550°C) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 °C, whereas the lowest resistivity (∼3.3 × 10 -4 Ωcm) and highest carrier concentration (∼1. 33×1021cm-3) values are observed for the GaZnO films deposited at 400 °C. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions may affect the electrical properties of GaZnO films on SiC.",
keywords = "GaZnO, SiC, Transparent electrode",
author = "Lee, {Jung Ho} and Kim, {Ji Hong} and Do, {Kang Min} and Moon, {Byung Moo} and Joo, {Sung Jae} and Wook Bahng and Kim, {Sang Cheol} and Kim, {Nam Kyun} and Koo, {Sang Mo}",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.849",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "849--852",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
}