Geometry and interface structure of island nuclei for GaSb buffer layers grown on (001) GaAs by metalorganic vapour phase epitaxy

Engineering & Materials Science

• Metallorganic vapor phase epitaxy 95%
• Dislocations (crystals) 86%
• Buffer layers 77%
• High resolution electron microscopy 45%
• Atomic force microscopy 34%
• Interfacial energy 33%
• Geometry 32%
• Anisotropy 28%
• Transmission electron microscopy 27%

Chemical Compounds

• Misfit Dislocation 100%
• Metallorganic Chemical Vapour Deposition 87%
• Buffer Solution 35%
• Interfacial Energy 26%
• Anisotropy 25%
• Atomic Force Microscopy 21%
• Strain 18%
• Transmission Electron Microscopy 17%

Physics & Astronomy

• vapor phase epitaxy 56%
• buffers 45%
• nuclei 35%
• geometry 30%
• surface energy 12%
• flat surfaces 12%
• atomic force microscopy 10%
• optimization 8%
• transmission electron microscopy 8%
• anisotropy 8%
• augmentation 8%