Germanium in situ doped epitaxial growth on Si for high-performance n+/p-junction diode

Hyun Yong Yu; Szu Lin Cheng; Peter B. Griffin; Yoshio Nishi; Krishna C. Saraswat

doi:10.1109/LED.2009.2027823

Germanium in situ doped epitaxial growth on Si for high-performance n⁺/p-junction diode

Hyun Yong Yu, Szu Lin Cheng, Peter B. Griffin, Yoshio Nishi, Krishna C. Saraswat

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

We demonstrate an abrupt and box-shaped n⁺/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n⁺/p-junction diodes at 400 °C-600 °C, based on the In Situ doping technique. Excellent diode characteristics having a 1.1 × 10⁴ on/off ratio and a high forward current density (120 A/cm² at 1 V) are obtained in an n⁺/p diode at 600-°C in situ doping.

Original language	English
Pages (from-to)	1002-1004
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	9
DOIs	https://doi.org/10.1109/LED.2009.2027823
Publication status	Published - 2009
Externally published	Yes

Keywords

Doping
Germanium
In situ
Phosphorus
Shallow

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2009.2027823

Cite this

@article{6240cae6814746f0b51904ff7bf3580d,

title = "Germanium in situ doped epitaxial growth on Si for high-performance n+/p-junction diode",

abstract = "We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n+/p-junction diodes at 400 °C-600 °C, based on the In Situ doping technique. Excellent diode characteristics having a 1.1 × 104 on/off ratio and a high forward current density (120 A/cm2 at 1 V) are obtained in an n+/p diode at 600-°C in situ doping.",

keywords = "Doping, Germanium, In situ, Phosphorus, Shallow",

author = "Yu, {Hyun Yong} and Cheng, {Szu Lin} and Griffin, {Peter B.} and Yoshio Nishi and Saraswat, {Krishna C.}",

note = "Funding Information: Manuscript received June 5, 2009. First published August 4, 2009; current version published August 27, 2009. This work was supported in part by the MARCO Interconnect Focus Center and in part by the Stanford University INMP program. The review of this letter was arranged by Editor M. Ostling.",

year = "2009",

doi = "10.1109/LED.2009.2027823",

language = "English",

volume = "30",

pages = "1002--1004",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Germanium in situ doped epitaxial growth on Si for high-performance n+/p-junction diode

AU - Yu, Hyun Yong

AU - Cheng, Szu Lin

AU - Griffin, Peter B.

AU - Nishi, Yoshio

AU - Saraswat, Krishna C.

N1 - Funding Information: Manuscript received June 5, 2009. First published August 4, 2009; current version published August 27, 2009. This work was supported in part by the MARCO Interconnect Focus Center and in part by the Stanford University INMP program. The review of this letter was arranged by Editor M. Ostling.

PY - 2009

Y1 - 2009

N2 - We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n+/p-junction diodes at 400 °C-600 °C, based on the In Situ doping technique. Excellent diode characteristics having a 1.1 × 104 on/off ratio and a high forward current density (120 A/cm2 at 1 V) are obtained in an n+/p diode at 600-°C in situ doping.

AB - We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n+/p-junction diodes at 400 °C-600 °C, based on the In Situ doping technique. Excellent diode characteristics having a 1.1 × 104 on/off ratio and a high forward current density (120 A/cm2 at 1 V) are obtained in an n+/p diode at 600-°C in situ doping.

KW - Doping

KW - Germanium

KW - In situ

KW - Phosphorus

KW - Shallow

UR - http://www.scopus.com/inward/record.url?scp=69949186735&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2027823

DO - 10.1109/LED.2009.2027823

M3 - Article

AN - SCOPUS:69949186735

SN - 0741-3106

VL - 30

SP - 1002

EP - 1004

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -