Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs:Be multilayers

Sunjae Chung; Sanghoon Lee; J. H. Chung; Taehee Yoo; Hakjoon Lee; B. Kirby; X. Liu; J. K. Furdyna

doi:10.1103/PhysRevB.82.054420

Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs:Be multilayers

Sunjae Chung, Sanghoon Lee, J. H. Chung, Taehee Yoo, Hakjoon Lee, B. Kirby, X. Liu, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We report the observation of the giant magnetoresistance effect in semiconductor-based GaMnAs/GaAs:Be multilayers. Clear transitions between low-field-high-resistance and high-field-low-resistance states are observed in selected samples with Be-doped nonmagnetic spacers. These samples also show negative coercive fields in their magnetic hysteresis and antiferromagnetic (AFM) splittings in polarized neutron reflectivity. Our data indicate that the AFM interlayer exchange couplings in this system occur over much longer periods than predicted by current theories, strongly suggesting that the coupling in III-V semiconductor-based magnetic multilayers is significantly longer ranged than in metallic systems.

Original language	English
Article number	054420
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	82
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevB.82.054420
Publication status	Published - 2010 Aug 13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.82.054420

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@article{220e54d2210f4934982e966a4fbeda12,

title = "Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs:Be multilayers",

abstract = "We report the observation of the giant magnetoresistance effect in semiconductor-based GaMnAs/GaAs:Be multilayers. Clear transitions between low-field-high-resistance and high-field-low-resistance states are observed in selected samples with Be-doped nonmagnetic spacers. These samples also show negative coercive fields in their magnetic hysteresis and antiferromagnetic (AFM) splittings in polarized neutron reflectivity. Our data indicate that the AFM interlayer exchange couplings in this system occur over much longer periods than predicted by current theories, strongly suggesting that the coupling in III-V semiconductor-based magnetic multilayers is significantly longer ranged than in metallic systems.",

author = "Sunjae Chung and Sanghoon Lee and Chung, {J. H.} and Taehee Yoo and Hakjoon Lee and B. Kirby and X. Liu and Furdyna, {J. K.}",

year = "2010",

month = aug,

day = "13",

doi = "10.1103/PhysRevB.82.054420",

language = "English",

volume = "82",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs:Be multilayers

AU - Chung, Sunjae

AU - Lee, Sanghoon

AU - Chung, J. H.

AU - Yoo, Taehee

AU - Lee, Hakjoon

AU - Kirby, B.

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2010/8/13

Y1 - 2010/8/13

N2 - We report the observation of the giant magnetoresistance effect in semiconductor-based GaMnAs/GaAs:Be multilayers. Clear transitions between low-field-high-resistance and high-field-low-resistance states are observed in selected samples with Be-doped nonmagnetic spacers. These samples also show negative coercive fields in their magnetic hysteresis and antiferromagnetic (AFM) splittings in polarized neutron reflectivity. Our data indicate that the AFM interlayer exchange couplings in this system occur over much longer periods than predicted by current theories, strongly suggesting that the coupling in III-V semiconductor-based magnetic multilayers is significantly longer ranged than in metallic systems.

AB - We report the observation of the giant magnetoresistance effect in semiconductor-based GaMnAs/GaAs:Be multilayers. Clear transitions between low-field-high-resistance and high-field-low-resistance states are observed in selected samples with Be-doped nonmagnetic spacers. These samples also show negative coercive fields in their magnetic hysteresis and antiferromagnetic (AFM) splittings in polarized neutron reflectivity. Our data indicate that the AFM interlayer exchange couplings in this system occur over much longer periods than predicted by current theories, strongly suggesting that the coupling in III-V semiconductor-based magnetic multilayers is significantly longer ranged than in metallic systems.

UR - http://www.scopus.com/inward/record.url?scp=77957374894&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.82.054420

DO - 10.1103/PhysRevB.82.054420

M3 - Article

AN - SCOPUS:77957374894

SN - 1098-0121

VL - 82

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 5

M1 - 054420

ER -

Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs:Be multilayers

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