Grain-boundary conduction in gadolinia-doped ceria: The effect of SrO addition

Pyeong Seok Cho; Yoon Ho Cho; Seung Young Park; Sung Bo Lee; Doh Yeon Kim; Hyun Min Park; Graeme Auchterlonie; John Drennan; Jong Heun Lee

doi:10.1149/1.3046153

Grain-boundary conduction in gadolinia-doped ceria: The effect of SrO addition

Pyeong Seok Cho^*, Yoon Ho Cho, Seung Young Park, Sung Bo Lee, Doh Yeon Kim, Hyun Min Park, Graeme Auchterlonie, John Drennan, Jong Heun Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

This study examined the effect of adding SrO on the grain-boundary conduction of Ce0.9 Gd0.1 O1.95 (gadolinia-doped ceria) containing 500 ppm Si O2. The apparent grain-boundary resistivity at 300°C decreased drastically from 746.7 to 0.90-1.97 k cm upon doping with 1 mol % SrO, while the grain-interior resistivity increased gradually from 3.1 to 11.6 k cm as the SrO concentration was increased up to 5 mol %. Therefore, doping with 1 mol % SrO resulted in the minimum total resistivity. The electron probe X-ray microanalysis and the analysis of the lattice parameters suggest that the 140-500-fold enhancement in the grain-boundary conduction is attributed to the scavenging of the highly resistive siliceous phase by the SrO-containing phase.

Original language	English
Pages (from-to)	B339-B344
Journal	Journal of the Electrochemical Society
Volume	156
Issue number	3
DOIs	https://doi.org/10.1149/1.3046153
Publication status	Published - 2009

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

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title = "Grain-boundary conduction in gadolinia-doped ceria: The effect of SrO addition",

abstract = "This study examined the effect of adding SrO on the grain-boundary conduction of Ce0.9 Gd0.1 O1.95 (gadolinia-doped ceria) containing 500 ppm Si O2. The apparent grain-boundary resistivity at 300°C decreased drastically from 746.7 to 0.90-1.97 k cm upon doping with 1 mol \% SrO, while the grain-interior resistivity increased gradually from 3.1 to 11.6 k cm as the SrO concentration was increased up to 5 mol \%. Therefore, doping with 1 mol \% SrO resulted in the minimum total resistivity. The electron probe X-ray microanalysis and the analysis of the lattice parameters suggest that the 140-500-fold enhancement in the grain-boundary conduction is attributed to the scavenging of the highly resistive siliceous phase by the SrO-containing phase.",

author = "Cho, \{Pyeong Seok\} and Cho, \{Yoon Ho\} and Park, \{Seung Young\} and Lee, \{Sung Bo\} and Kim, \{Doh Yeon\} and Park, \{Hyun Min\} and Graeme Auchterlonie and John Drennan and Lee, \{Jong Heun\}",

year = "2009",

doi = "10.1149/1.3046153",

language = "English",

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journal = "Journal of the Electrochemical Society",

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TY - JOUR

T1 - Grain-boundary conduction in gadolinia-doped ceria

T2 - The effect of SrO addition

AU - Cho, Pyeong Seok

AU - Cho, Yoon Ho

AU - Park, Seung Young

AU - Lee, Sung Bo

AU - Kim, Doh Yeon

AU - Park, Hyun Min

AU - Auchterlonie, Graeme

AU - Drennan, John

AU - Lee, Jong Heun

PY - 2009

Y1 - 2009

N2 - This study examined the effect of adding SrO on the grain-boundary conduction of Ce0.9 Gd0.1 O1.95 (gadolinia-doped ceria) containing 500 ppm Si O2. The apparent grain-boundary resistivity at 300°C decreased drastically from 746.7 to 0.90-1.97 k cm upon doping with 1 mol % SrO, while the grain-interior resistivity increased gradually from 3.1 to 11.6 k cm as the SrO concentration was increased up to 5 mol %. Therefore, doping with 1 mol % SrO resulted in the minimum total resistivity. The electron probe X-ray microanalysis and the analysis of the lattice parameters suggest that the 140-500-fold enhancement in the grain-boundary conduction is attributed to the scavenging of the highly resistive siliceous phase by the SrO-containing phase.

AB - This study examined the effect of adding SrO on the grain-boundary conduction of Ce0.9 Gd0.1 O1.95 (gadolinia-doped ceria) containing 500 ppm Si O2. The apparent grain-boundary resistivity at 300°C decreased drastically from 746.7 to 0.90-1.97 k cm upon doping with 1 mol % SrO, while the grain-interior resistivity increased gradually from 3.1 to 11.6 k cm as the SrO concentration was increased up to 5 mol %. Therefore, doping with 1 mol % SrO resulted in the minimum total resistivity. The electron probe X-ray microanalysis and the analysis of the lattice parameters suggest that the 140-500-fold enhancement in the grain-boundary conduction is attributed to the scavenging of the highly resistive siliceous phase by the SrO-containing phase.

UR - https://www.scopus.com/pages/publications/59349115939

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DO - 10.1149/1.3046153

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SN - 0013-4651

VL - 156

SP - B339-B344

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Grain-boundary conduction in gadolinia-doped ceria: The effect of SrO addition

Abstract

ASJC Scopus subject areas

UN SDGs

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