Grain growth behavior in a columnar-grain-structured silicon wafer for photovoltaic application

Ye Neug Lee, Jin Seok Lee, Bo Yun Jang, Joon Soo Kim, Young Soo Ahn, Woo Young Yoon

Research output: Contribution to journalArticlepeer-review


With direct growth technologies for obtaining ribbon-type silicon (Si) wafers from molten Si, the horizontal growth process is much faster than the vertical one in terms of the growth rate of the wafer. However, such a fast growth rate is likely to create grains of a relatively small size in the Si wafer, resulting in limited efficiency caused by grain boundary recombination. In this regard, controlling the grain growth behavior of the Si wafer with processing parameters such as the temperature of the substrate and its moving speed is very important in the horizontal growth process. The present investigation produced the experimental findings concerning the processing parameters for controlling the grain size. The size of the grains on the surface of the Si wafer increased to around 180 μm at a lower substrate temperature and a slower the moving speed of the substrate due to the increasing thickness of the Si wafer. However, the growth rate of the grains was observed to have little relation to the variations in the wafer thickness resulting from the processing parameters unless the nucleation behavior had been controlled.

Original languageEnglish
Pages (from-to)190-195
Number of pages6
JournalJournal of the Korean Physical Society
Issue number2
Publication statusPublished - 2014 Jul

Bibliographical note

Funding Information:
This work was conducted under the framework of Research and Development Program of the Korea Institute of Energy Research (KIER) (B4-2444-03).


  • Growth
  • Nucleation
  • Photovoltaic
  • Silicon
  • Wafer

ASJC Scopus subject areas

  • General Physics and Astronomy


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