Graphene quantum dot-embedded perovskite photodetectors with fast response and enhanced sensitivity through bulk defect passivation

David Sunghwan Lee, Jeong Seob Yun, Jin Hyuck Heo, Bong Woo Kim, Sang Hyuk Im

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Graphene quantum dots (GQDs) synthesized by single phase solution chemistry are embedded in metal halide perovskite (MHP) films because they can act as passivating defects that are present throughout the MHP film, not only at the interface but also throughout the bulk of the film. The perovskite photodetectors composed of indium-doped tin oxide/SnO2/MHP with embedded GQDs/poly triarylamine/Au have the reduced dark current, increased detectivity, and fasted response speed due to lower trap density throughout the bulk MHP layer.

Original languageEnglish
Pages (from-to)383-389
Number of pages7
JournalJournal of Industrial and Engineering Chemistry
Volume100
DOIs
Publication statusPublished - 2021 Aug 25

Bibliographical note

Funding Information:
D.S. Lee and J.-S. Yun contributed equally to this study. This study was supported by the National Research Foundation of Korea (NRF) under the Ministry of Science, ICT & Future Planning (Basic Science Research Program (No. 2021R1A5A6002853 ), and Nano-Material Technology Development Program (No. 2017M3A7B4041696 )) and the Ministry of Trade, Industry & Energy, Republic of Korea (New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (No. 20183010013820 ).

Publisher Copyright:
© 2021 The Korean Society of Industrial and Engineering Chemistry

Keywords

  • Bulk defect passivation
  • Fast response
  • Graphene quantum dots
  • Perovskites
  • Photodetectors
  • Sensitivity

ASJC Scopus subject areas

  • General Chemical Engineering

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