Abstract
Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).
Original language | English |
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Pages (from-to) | 19043-19049 |
Number of pages | 7 |
Journal | ACS Applied Materials and Interfaces |
Volume | 7 |
Issue number | 34 |
DOIs | |
Publication status | Published - 2015 Aug 12 |
Bibliographical note
Publisher Copyright:© 2015 American Chemical Society.
Keywords
- GQD layers
- energy-down-shift
- graphene quantum dots
- light absorption
- silicon solar cells
ASJC Scopus subject areas
- General Materials Science