Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells

Kyung D. Lee, Myung J. Park, Do Yeon Kim, Soo M. Kim, Byungjun Kang, Seongtak Kim, Hyunho Kim, Hae Seok Lee, Yoonmook Kang, Sam S. Yoon, Byung H. Hong, Donghwan Kim

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

Original languageEnglish
Pages (from-to)19043-19049
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number34
Publication statusPublished - 2015 Aug 12


  • GQD layers
  • energy-down-shift
  • graphene quantum dots
  • light absorption
  • silicon solar cells

ASJC Scopus subject areas

  • Materials Science(all)


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