Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells

Kyung D. Lee; Myung J. Park; Do Yeon Kim; Soo M. Kim; Byungjun Kang; Seongtak Kim; Hyunho Kim; Hae Seok Lee; Yoonmook Kang; Sam S. Yoon; Byung H. Hong; Donghwan Kim

doi:10.1021/acsami.5b03672

Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells

Kyung D. Lee, Myung J. Park, Do Yeon Kim, Soo M. Kim, Byungjun Kang, Seongtak Kim, Hyunho Kim, Hae Seok Lee, Yoonmook Kang, Sam S. Yoon, Byung H. Hong, Donghwan Kim

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm²) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

Original language	English
Pages (from-to)	19043-19049
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	7
Issue number	34
DOIs	https://doi.org/10.1021/acsami.5b03672
Publication status	Published - 2015 Aug 12

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.

Keywords

GQD layers
energy-down-shift
graphene quantum dots
light absorption
silicon solar cells

ASJC Scopus subject areas

General Materials Science

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10.1021/acsami.5b03672

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@article{ac18ab634e9c4844b59acc762cc0005a,

title = "Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells",

abstract = "Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).",

keywords = "GQD layers, energy-down-shift, graphene quantum dots, light absorption, silicon solar cells",

author = "Lee, {Kyung D.} and Park, {Myung J.} and Kim, {Do Yeon} and Kim, {Soo M.} and Byungjun Kang and Seongtak Kim and Hyunho Kim and Lee, {Hae Seok} and Yoonmook Kang and Yoon, {Sam S.} and Hong, {Byung H.} and Donghwan Kim",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = aug,

day = "12",

doi = "10.1021/acsami.5b03672",

language = "English",

volume = "7",

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journal = "ACS Applied Materials and Interfaces",

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T1 - Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells

AU - Lee, Kyung D.

AU - Park, Myung J.

AU - Kim, Do Yeon

AU - Kim, Soo M.

AU - Kang, Byungjun

AU - Kim, Seongtak

AU - Kim, Hyunho

AU - Lee, Hae Seok

AU - Kang, Yoonmook

AU - Yoon, Sam S.

AU - Hong, Byung H.

AU - Kim, Donghwan

PY - 2015/8/12

Y1 - 2015/8/12

N2 - Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

AB - Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

KW - GQD layers

KW - energy-down-shift

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KW - light absorption

KW - silicon solar cells

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Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells

Abstract

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Keywords

ASJC Scopus subject areas

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