Group III-nitride radial heterojunction nanowire light emitters

Michael A. Mastro, Josh Caldwell, Mark Twigg, Blake Simpkins, Orest Glembocki, Ron T. Holm, Charles R. Eddy, Fritz Kub, Hong Yeol Kim, Jaehui Ahn, Jihyun Kim

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.

    Original languageEnglish
    Pages (from-to)584-587
    Number of pages4
    JournalJournal of Ceramic Processing Research
    Volume9
    Issue number6
    Publication statusPublished - 2008

    Keywords

    • Defect
    • III-nitride
    • Nanowire

    ASJC Scopus subject areas

    • Ceramics and Composites

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