Abstract
Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.
Original language | English |
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Pages (from-to) | 584-587 |
Number of pages | 4 |
Journal | Journal of Ceramic Processing Research |
Volume | 9 |
Issue number | 6 |
Publication status | Published - 2008 |
Keywords
- Defect
- III-nitride
- Nanowire
ASJC Scopus subject areas
- Ceramics and Composites