Group III-nitride radial heterojunction nanowire light emitters

  • Michael A. Mastro*
  • , Josh Caldwell
  • , Mark Twigg
  • , Blake Simpkins
  • , Orest Glembocki
  • , Ron T. Holm
  • , Charles R. Eddy
  • , Fritz Kub
  • , Hong Yeol Kim
  • , Jaehui Ahn
  • , Jihyun Kim
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.

    Original languageEnglish
    Pages (from-to)584-587
    Number of pages4
    JournalJournal of Ceramic Processing Research
    Volume9
    Issue number6
    Publication statusPublished - 2008

    Keywords

    • Defect
    • III-nitride
    • Nanowire

    ASJC Scopus subject areas

    • Ceramics and Composites

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