Growth and characterization of CdZnS thin film buffer layers by chemical bath deposition

  • Jiyon Song*
  • , Sheng S. Li
  • , S. Yoon
  • , W. K. Kim
  • , Jihyun Kim
  • , J. Chen
  • , V. Craciun
  • , T. J. Anderson
  • , O. D. Crisalle
  • , Fan Ren
  • *Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

In this paper we report the study of CdZnS thin films grown on the soda-lime glass (SLG) substrates by Chemical Bath Deposition (CBD) process for buffer layer applications in CuGaSe 2 (CGS) solar cells. Structural, surface morphology, optical, and electrical properties of as-deposited CdZnS films were investigated by XRD, SEM, spectrophotometer, and four probes resistivity measurements as a function of Zn- composition in the solution. The CdZnS films have hexagonal structures. The grain size of CdZnS films was found to increase with increasing Zn- content in the solution. The films with 30% of Zn in the solution showed a better than 80% transmittance for wavelengths longer than 600 nm and film thickness less than 50 nm. The values of energy band gaps obtained are 2.40, 2.55, and 2.70 eV for Zn- content of 0, 30, and 50%, respectively. The resistivity of CdZnS films was found to increase as the Zn content increases.

Original languageEnglish
Pages (from-to)449-452
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2005
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 2005 Jan 32005 Jan 7

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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