Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO3 and SrTiO3 substrates

Ji Hong Kim; Ji Hyung Roh; Kyung Ju Lee; Sung Joon Moon; Jae Won Kim; Kang Min Do; Byung Moo Moon; Sang Mo Koo

doi:10.1016/j.jcrysgro.2011.07.015

Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO₃ and SrTiO₃ substrates

Ji Hong Kim, Ji Hyung Roh, Kyung Ju Lee, Sung Joon Moon, Jae Won Kim, Kang Min Do, Byung Moo Moon, Sang Mo Koo

GREEN SCHOOL (Graduate School of Energy and Environment)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ga-doped ZnO (GZO) thin films were grown on LaAlO₃ (LAO) and SrTiO₃ (STO) substrates by using a pulsed laser deposition (PLD) technique at various substrate temperatures. It was found that the nonpolar a-plane GZO thin films were grown on LAO (1 0 0) substrates. However, the polar c-plane or the c-plane coexistent with the a-plane GZO films were obtained on STO (1 0 0) substrates. The in-plane orientational relationship between the GZO films and substrates was also investigated. The electrical properties of the films were deeply affected by the growth orientation. The GZO films with a-axis oriented phase showed higher resistivity than with c-oriented phase, which can be ascribed to the lower mobility due to the increase in grain boundary scattering.

Original language	English
Pages (from-to)	72-75
Number of pages	4
Journal	Journal of Crystal Growth
Volume	334
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.07.015
Publication status	Published - 2011 Nov 1

Keywords

A1. Atomic force microscopy
A1. Hall measurement
A1. High resolution X-ray diffraction
A3. Pulsed laser deposition
B1. Ga-doped ZnO
B2. Semiconducting IIVI materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2011.07.015

Cite this

@article{fd9f969afa05483fa649af3ad135ea34,

title = "Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO3 and SrTiO3 substrates",

abstract = "Ga-doped ZnO (GZO) thin films were grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates by using a pulsed laser deposition (PLD) technique at various substrate temperatures. It was found that the nonpolar a-plane GZO thin films were grown on LAO (1 0 0) substrates. However, the polar c-plane or the c-plane coexistent with the a-plane GZO films were obtained on STO (1 0 0) substrates. The in-plane orientational relationship between the GZO films and substrates was also investigated. The electrical properties of the films were deeply affected by the growth orientation. The GZO films with a-axis oriented phase showed higher resistivity than with c-oriented phase, which can be ascribed to the lower mobility due to the increase in grain boundary scattering.",

keywords = "A1. Atomic force microscopy, A1. Hall measurement, A1. High resolution X-ray diffraction, A3. Pulsed laser deposition, B1. Ga-doped ZnO, B2. Semiconducting IIVI materials",

author = "Kim, {Ji Hong} and Roh, {Ji Hyung} and Lee, {Kyung Ju} and Moon, {Sung Joon} and Kim, {Jae Won} and Do, {Kang Min} and Moon, {Byung Moo} and Koo, {Sang Mo}",

note = "Funding Information: This work was supported by Korea University Grant and the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government ministry of knowledge economy (no. 20103030010040-11-1000 ).",

year = "2011",

month = nov,

day = "1",

doi = "10.1016/j.jcrysgro.2011.07.015",

language = "English",

volume = "334",

pages = "72--75",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO3 and SrTiO3 substrates

AU - Kim, Ji Hong

AU - Roh, Ji Hyung

AU - Lee, Kyung Ju

AU - Moon, Sung Joon

AU - Kim, Jae Won

AU - Do, Kang Min

AU - Moon, Byung Moo

AU - Koo, Sang Mo

N1 - Funding Information: This work was supported by Korea University Grant and the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government ministry of knowledge economy (no. 20103030010040-11-1000 ).

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Ga-doped ZnO (GZO) thin films were grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates by using a pulsed laser deposition (PLD) technique at various substrate temperatures. It was found that the nonpolar a-plane GZO thin films were grown on LAO (1 0 0) substrates. However, the polar c-plane or the c-plane coexistent with the a-plane GZO films were obtained on STO (1 0 0) substrates. The in-plane orientational relationship between the GZO films and substrates was also investigated. The electrical properties of the films were deeply affected by the growth orientation. The GZO films with a-axis oriented phase showed higher resistivity than with c-oriented phase, which can be ascribed to the lower mobility due to the increase in grain boundary scattering.

AB - Ga-doped ZnO (GZO) thin films were grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates by using a pulsed laser deposition (PLD) technique at various substrate temperatures. It was found that the nonpolar a-plane GZO thin films were grown on LAO (1 0 0) substrates. However, the polar c-plane or the c-plane coexistent with the a-plane GZO films were obtained on STO (1 0 0) substrates. The in-plane orientational relationship between the GZO films and substrates was also investigated. The electrical properties of the films were deeply affected by the growth orientation. The GZO films with a-axis oriented phase showed higher resistivity than with c-oriented phase, which can be ascribed to the lower mobility due to the increase in grain boundary scattering.

KW - A1. Atomic force microscopy

KW - A1. Hall measurement

KW - A1. High resolution X-ray diffraction

KW - A3. Pulsed laser deposition

KW - B1. Ga-doped ZnO

KW - B2. Semiconducting IIVI materials

UR - http://www.scopus.com/inward/record.url?scp=80053298978&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2011.07.015

DO - 10.1016/j.jcrysgro.2011.07.015

M3 - Article

AN - SCOPUS:80053298978

SN - 0022-0248

VL - 334

SP - 72

EP - 75

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -