Growth and field electron emission of vertically aligned multiwalled carbon nanotubes

Cheol Jin Lee; Jeunghee Park; Seung Youl Kang; Jin Ho Lee

doi:10.1016/S0009-2614(00)00751-X

Growth and field electron emission of vertically aligned multiwalled carbon nanotubes

Cheol Jin Lee^*
, Jeunghee Park
, Seung Youl Kang
, Jin Ho Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

Vertically well-aligned carbon nanotubes (CNTs) are grown on a Ni deposited silicon oxide substrate at 950°C by thermal chemical vapor deposition using C₂H₂. The uniformly grown CNTs with a diameter of about 60 nm have unique beak-like tips without any encapsulated Ni particles inside and exhibit high field emission current density, e.g. 2.9 mA/cm² at 3.7 V/μm, following a Fowler-Nordheim behavior.

Original language	English
Pages (from-to)	175-180
Number of pages	6
Journal	Chemical Physics Letters
Volume	326
Issue number	1-2
DOIs	https://doi.org/10.1016/S0009-2614(00)00751-X
Publication status	Published - 2000 Aug 11
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/S0009-2614(00)00751-X

Cite this

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abstract = "Vertically well-aligned carbon nanotubes (CNTs) are grown on a Ni deposited silicon oxide substrate at 950°C by thermal chemical vapor deposition using C2H2. The uniformly grown CNTs with a diameter of about 60 nm have unique beak-like tips without any encapsulated Ni particles inside and exhibit high field emission current density, e.g. 2.9 mA/cm2 at 3.7 V/μm, following a Fowler-Nordheim behavior.",

author = "Lee, \{Cheol Jin\} and Jeunghee Park and Kang, \{Seung Youl\} and Lee, \{Jin Ho\}",

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doi = "10.1016/S0009-2614(00)00751-X",

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AU - Lee, Cheol Jin

AU - Park, Jeunghee

AU - Kang, Seung Youl

AU - Lee, Jin Ho

PY - 2000/8/11

Y1 - 2000/8/11

N2 - Vertically well-aligned carbon nanotubes (CNTs) are grown on a Ni deposited silicon oxide substrate at 950°C by thermal chemical vapor deposition using C2H2. The uniformly grown CNTs with a diameter of about 60 nm have unique beak-like tips without any encapsulated Ni particles inside and exhibit high field emission current density, e.g. 2.9 mA/cm2 at 3.7 V/μm, following a Fowler-Nordheim behavior.

AB - Vertically well-aligned carbon nanotubes (CNTs) are grown on a Ni deposited silicon oxide substrate at 950°C by thermal chemical vapor deposition using C2H2. The uniformly grown CNTs with a diameter of about 60 nm have unique beak-like tips without any encapsulated Ni particles inside and exhibit high field emission current density, e.g. 2.9 mA/cm2 at 3.7 V/μm, following a Fowler-Nordheim behavior.

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U2 - 10.1016/S0009-2614(00)00751-X

DO - 10.1016/S0009-2614(00)00751-X

M3 - Article

AN - SCOPUS:0001625369

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VL - 326

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EP - 180

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-2

ER -

Growth and field electron emission of vertically aligned multiwalled carbon nanotubes

Abstract

ASJC Scopus subject areas

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