Growth and optical properties of GaN on Si(1 1 1) substrates

Keyphrases

• Optical Properties 100%
• Growth Properties 100%
• GaN-on-Si 100%
• Reactor Wall 100%
• Surface Condition 66%
• AlN Buffer Layer 66%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Room Temperature 33%
• Photoluminescence 33%
• Si Substrate 33%
• High Temperature 33%
• GaN Layers 33%
• Buffer Layer 33%
• Si Surface 33%
• Band-edge Emission 33%
• Initial Surface 33%
• Epitaxial Film 33%
• Optical Quality 33%
• Excitonic Transition 33%
• Epitaxial GaN 33%
• Nitride Complexes 33%
• GaN Film 33%
• GaN Epitaxial Layer 33%

Material Science

• Optical Property 100%
• Aluminum Nitride 100%
• Buffer Layer 50%
• Film 33%
• Epitaxial Film 33%
• Photoluminescence 16%
• Chemical Vapor Deposition 16%
• Nitride Compound 16%