Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal

  • Kei Kamada*
  • , Yasuhiro Shoji
  • , Vladimir V. Kochurikhin
  • , Satoshi Okumura
  • , Seiichi Yamamoto
  • , Aya Nagura
  • , Jung Yeol Yeom
  • , Shunsuke Kurosawa
  • , Yuui Yokota
  • , Yuji Ohashi
  • , Martin Nikl
  • , Akira Yoshikawa
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    44 Citations (Scopus)

    Abstract

    The 3 in. size Ce1%:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Optical constants were measured. Chemical composition analysis and uniformity of scintillation decay and light yield along growth direction were evaluated. The timing resolution measurement for a pair of 3 mm×3 mm×3 mm size Ce:GAGG scintillator crystals was performed using Si-PMs.

    Original languageEnglish
    Pages (from-to)81-84
    Number of pages4
    JournalJournal of Crystal Growth
    Volume452
    DOIs
    Publication statusPublished - 2016 Oct 15

    Bibliographical note

    Publisher Copyright:
    © 2016 Elsevier B.V.

    Keywords

    • A2. Single crystal growth
    • B1. Oxides
    • B2. Scintillator materials
    • B3. Scintillators

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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