Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering

Lee Seung Kang; Bo Yun Kim; In Tae Seo; Tae Geun Seong; Jin Seong Kim; Jong Woo Sun; Dong Soo Paik; Inrok Hwang; Bae Ho Park; Sahn Nahm

doi:10.1111/j.1551-2916.2011.04574.x

Growth behavior and electrical properties of a (Na_0.5K _0.5)NbO₃thin film deposited on a Pt/Ti/SiO₂/Si substrate using RFmagnetron sputtering

Lee Seung Kang, Bo Yun Kim, In Tae Seo, Tae Geun Seong, Jin Seong Kim, Jong Woo Sun, Dong Soo Paik, Inrok Hwang, Bae Ho Park, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

A crystalline (Na_0.5K_0.5)NbO₃ (NKN) phase was formed for a film grown at 600°C, but a K_5.75Nb _10.85O₃₀ (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na₂O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na₂O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10^-8 A/cm² at 0.1 MV/cm ², and the high P_r and d₃₃ values of 21.1 μC/cm² and 64.5 pm/V, respectively.

Original language	English
Pages (from-to)	1970-1973
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	94
Issue number	7
DOIs	https://doi.org/10.1111/j.1551-2916.2011.04574.x
Publication status	Published - 2011 Jul

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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Kang, L. S., Kim, B. Y., Seo, I. T., Seong, T. G., Kim, J. S., Sun, J. W., Paik, D. S., Hwang, I., Park, B. H., & Nahm, S. (2011). Growth behavior and electrical properties of a (Na_0.5K _0.5)NbO₃thin film deposited on a Pt/Ti/SiO₂/Si substrate using RFmagnetron sputtering. Journal of the American Ceramic Society, 94(7), 1970-1973. https://doi.org/10.1111/j.1551-2916.2011.04574.x

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title = "Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering",

abstract = "A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.",

author = "Kang, {Lee Seung} and Kim, {Bo Yun} and Seo, {In Tae} and Seong, {Tae Geun} and Kim, {Jin Seong} and Sun, {Jong Woo} and Paik, {Dong Soo} and Inrok Hwang and Park, {Bae Ho} and Sahn Nahm",

year = "2011",

month = jul,

doi = "10.1111/j.1551-2916.2011.04574.x",

language = "English",

volume = "94",

pages = "1970--1973",

journal = "Journal of the American Ceramic Society",

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T1 - Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering

AU - Kang, Lee Seung

AU - Kim, Bo Yun

AU - Seo, In Tae

AU - Seong, Tae Geun

AU - Kim, Jin Seong

AU - Sun, Jong Woo

AU - Paik, Dong Soo

AU - Hwang, Inrok

AU - Park, Bae Ho

AU - Nahm, Sahn

PY - 2011/7

Y1 - 2011/7

N2 - A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.

AB - A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.

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DO - 10.1111/j.1551-2916.2011.04574.x

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SN - 0002-7820

VL - 94

SP - 1970

EP - 1973

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

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Growth behavior and electrical properties of a (Na_0.5K _0.5)NbO₃thin film deposited on a Pt/Ti/SiO₂/Si substrate using RFmagnetron sputtering

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