Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering

Lee Seung Kang; Bo Yun Kim; In Tae Seo; Tae Geun Seong; Jin Seong Kim; Jong Woo Sun; Dong Soo Paik; Inrok Hwang; Bae Ho Park; Sahn Nahm

doi:10.1111/j.1551-2916.2011.04574.x

Growth behavior and electrical properties of a (Na_0.5K _0.5)NbO₃thin film deposited on a Pt/Ti/SiO₂/Si substrate using RFmagnetron sputtering

Lee Seung Kang
, Bo Yun Kim
, In Tae Seo
, Tae Geun Seong
, Jin Seong Kim
, Jong Woo Sun
, Dong Soo Paik
, Inrok Hwang
, Bae Ho Park
, Sahn Nahm^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

A crystalline (Na_0.5K_0.5)NbO₃ (NKN) phase was formed for a film grown at 600°C, but a K_5.75Nb _10.85O₃₀ (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na₂O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na₂O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10^-8 A/cm² at 0.1 MV/cm ², and the high P_r and d₃₃ values of 21.1 μC/cm² and 64.5 pm/V, respectively.

Original language	English
Pages (from-to)	1970-1973
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	94
Issue number	7
DOIs	https://doi.org/10.1111/j.1551-2916.2011.04574.x
Publication status	Published - 2011 Jul

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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Kang, L. S., Kim, B. Y., Seo, I. T., Seong, T. G., Kim, J. S., Sun, J. W., Paik, D. S., Hwang, I., Park, B. H., & Nahm, S. (2011). Growth behavior and electrical properties of a (Na_0.5K _0.5)NbO₃thin film deposited on a Pt/Ti/SiO₂/Si substrate using RFmagnetron sputtering. Journal of the American Ceramic Society, 94(7), 1970-1973. https://doi.org/10.1111/j.1551-2916.2011.04574.x

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title = "Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering",

abstract = "A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93\% at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.",

author = "Kang, \{Lee Seung\} and Kim, \{Bo Yun\} and Seo, \{In Tae\} and Seong, \{Tae Geun\} and Kim, \{Jin Seong\} and Sun, \{Jong Woo\} and Paik, \{Dong Soo\} and Inrok Hwang and Park, \{Bae Ho\} and Sahn Nahm",

year = "2011",

month = jul,

doi = "10.1111/j.1551-2916.2011.04574.x",

language = "English",

volume = "94",

pages = "1970--1973",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

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number = "7",

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TY - JOUR

T1 - Growth behavior and electrical properties of a (Na0.5K 0.5)NbO3thin film deposited on a Pt/Ti/SiO2/Si substrate using RFmagnetron sputtering

AU - Kang, Lee Seung

AU - Kim, Bo Yun

AU - Seo, In Tae

AU - Seong, Tae Geun

AU - Kim, Jin Seong

AU - Sun, Jong Woo

AU - Paik, Dong Soo

AU - Hwang, Inrok

AU - Park, Bae Ho

AU - Nahm, Sahn

PY - 2011/7

Y1 - 2011/7

N2 - A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.

AB - A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb 10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0 × 10-8 A/cm2 at 0.1 MV/cm 2, and the high Pr and d33 values of 21.1 μC/cm2 and 64.5 pm/V, respectively.

UR - https://www.scopus.com/pages/publications/79960244315

U2 - 10.1111/j.1551-2916.2011.04574.x

DO - 10.1111/j.1551-2916.2011.04574.x

M3 - Article

AN - SCOPUS:79960244315

SN - 0002-7820

VL - 94

SP - 1970

EP - 1973

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 7

ER -

Growth behavior and electrical properties of a (Na_0.5K _0.5)NbO₃thin film deposited on a Pt/Ti/SiO₂/Si substrate using RFmagnetron sputtering

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