Abstract
TiNbO5 (TNO) thin films were deposited by electrophoresis at room temperature by using TNO− nanosheets. These TNO films exhibited a large (001) interplanar distance (1.18 nm) owing to the presence of TBA+ between the TNO layers. The TBA+, which were used to synthesize the TNO− nanosheets, were removed from the TNO film after annealing at 600 °C. Two types of structures were developed in the film annealed at 600 °C: type-1 and type-2, which revealed (001) interplanar distances of 0.52 and 0.71 nm, respectively. The TNO film annealed at 600 °C showed a dielectric constant of 48.5, low dielectric loss (0.02), and small leakage current density of 4.16 × 10−7 A/cm2 at 0.6 MV/cm. The dielectric properties were stable with respect to the film thickness and the applied electric field; the dielectric and insulation properties were maintained up to 300 °C. Therefore, TNO films are good candidates for high-temperature capacitors.
Original language | English |
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Pages (from-to) | 1149-1155 |
Number of pages | 7 |
Journal | Journal of the European Ceramic Society |
Volume | 39 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2019 Apr |
Keywords
- Electrophoresis
- High temperature capacitor
- Inorganic nanosheets
- Robust dielectric
- TiNbO film
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry