Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

Hyun Gi Hong; Tae Yeon Seong; Seonghoon Lee

doi:10.1109/ISCS.2003.1239936

Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

Hyun Gi Hong
, Tae Yeon Seong
, Seonghoon Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.

Original language	English
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	121-122
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239936
Publication status	Published - 2003
Externally published	Yes
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 2003 Aug 25 → 2003 Aug 27

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	03/8/25 → 03/8/27

Bibliographical note

Publisher Copyright:
© 2003 IEEE.

Keywords

Crystallization
Electron optics
Gallium nitride
Nanowires
Optical diffraction
Photoluminescence
Scanning electron microscopy
Silicon
X-ray diffraction
Zinc oxide

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.2003.1239936

Cite this

Hong, H. G., Seong, T. Y., & Lee, S. (2003). Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 121-122). Article 1239936 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239936

Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates. / Hong, Hyun Gi; Seong, Tae Yeon; Lee, Seonghoon.
2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 121-122 1239936 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hong, HG, Seong, TY & Lee, S 2003, Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239936, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 121-122, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239936

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abstract = "ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.",

keywords = "Crystallization, Electron optics, Gallium nitride, Nanowires, Optical diffraction, Photoluminescence, Scanning electron microscopy, Silicon, X-ray diffraction, Zinc oxide",

author = "Hong, \{Hyun Gi\} and Seong, \{Tae Yeon\} and Seonghoon Lee",

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doi = "10.1109/ISCS.2003.1239936",

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AU - Lee, Seonghoon

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AB - ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.

KW - Crystallization

KW - Electron optics

KW - Gallium nitride

KW - Nanowires

KW - Optical diffraction

KW - Photoluminescence

KW - Scanning electron microscopy

KW - Silicon

KW - X-ray diffraction

KW - Zinc oxide

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M3 - Conference contribution

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BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

Abstract

Publication series

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Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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