Growth mechanism of vertically aligned carbon nanotubes on silicon substrates

Young Chul Choi, Dae Woon Kim, Tae Jae Lee, Cheol Jin Lee, Young Hee Lee

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)


We have synthesized vertically aligned carbon nanotubes by thermal chemical vapor deposition using C2H2 gas on a large area of transition metal-coated Si substrates. It is observed that control of nucleation sites of transition metals deposited on Si substrates by a dipping in a HF solution and/or NH3 pretreatment is a crucial step for the growth of vertically aligned carbon nanotubes prior to the reaction of C2H2 gas. We show that the transition metals play as nucleation seeds and lead to further cap growth by forming a metal cap at the end of nanotubes.

Original languageEnglish
Pages (from-to)81-86
Number of pages6
JournalSynthetic Metals
Issue number1-3
Publication statusPublished - 2001 Feb 15
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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