Growth mechanism of vertically aligned carbon nanotubes on silicon substrates

Young Chul Choi; Dae Woon Kim; Tae Jae Lee; Cheol Jin Lee; Young Hee Lee

doi:10.1016/S0379-6779(00)00542-7

Growth mechanism of vertically aligned carbon nanotubes on silicon substrates

Young Chul Choi, Dae Woon Kim, Tae Jae Lee, Cheol Jin Lee, Young Hee Lee

Research output: Contribution to journal › Article › peer-review

63 Citations (Scopus)

Abstract

We have synthesized vertically aligned carbon nanotubes by thermal chemical vapor deposition using C₂H₂ gas on a large area of transition metal-coated Si substrates. It is observed that control of nucleation sites of transition metals deposited on Si substrates by a dipping in a HF solution and/or NH₃ pretreatment is a crucial step for the growth of vertically aligned carbon nanotubes prior to the reaction of C₂H₂ gas. We show that the transition metals play as nucleation seeds and lead to further cap growth by forming a metal cap at the end of nanotubes.

Original language	English
Pages (from-to)	81-86
Number of pages	6
Journal	Synthetic Metals
Volume	117
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(00)00542-7
Publication status	Published - 2001 Feb 15
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0379-6779(00)00542-7

Cite this

@article{4be043f2d4674606bba605d0b9110cdf,

title = "Growth mechanism of vertically aligned carbon nanotubes on silicon substrates",

abstract = "We have synthesized vertically aligned carbon nanotubes by thermal chemical vapor deposition using C2H2 gas on a large area of transition metal-coated Si substrates. It is observed that control of nucleation sites of transition metals deposited on Si substrates by a dipping in a HF solution and/or NH3 pretreatment is a crucial step for the growth of vertically aligned carbon nanotubes prior to the reaction of C2H2 gas. We show that the transition metals play as nucleation seeds and lead to further cap growth by forming a metal cap at the end of nanotubes.",

author = "Choi, {Young Chul} and Kim, {Dae Woon} and Lee, {Tae Jae} and Lee, {Cheol Jin} and Lee, {Young Hee}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center.",

year = "2001",

month = feb,

day = "15",

doi = "10.1016/S0379-6779(00)00542-7",

language = "English",

volume = "117",

pages = "81--86",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Growth mechanism of vertically aligned carbon nanotubes on silicon substrates

AU - Choi, Young Chul

AU - Kim, Dae Woon

AU - Lee, Tae Jae

AU - Lee, Cheol Jin

AU - Lee, Young Hee

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center.

PY - 2001/2/15

Y1 - 2001/2/15

N2 - We have synthesized vertically aligned carbon nanotubes by thermal chemical vapor deposition using C2H2 gas on a large area of transition metal-coated Si substrates. It is observed that control of nucleation sites of transition metals deposited on Si substrates by a dipping in a HF solution and/or NH3 pretreatment is a crucial step for the growth of vertically aligned carbon nanotubes prior to the reaction of C2H2 gas. We show that the transition metals play as nucleation seeds and lead to further cap growth by forming a metal cap at the end of nanotubes.

AB - We have synthesized vertically aligned carbon nanotubes by thermal chemical vapor deposition using C2H2 gas on a large area of transition metal-coated Si substrates. It is observed that control of nucleation sites of transition metals deposited on Si substrates by a dipping in a HF solution and/or NH3 pretreatment is a crucial step for the growth of vertically aligned carbon nanotubes prior to the reaction of C2H2 gas. We show that the transition metals play as nucleation seeds and lead to further cap growth by forming a metal cap at the end of nanotubes.

UR - http://www.scopus.com/inward/record.url?scp=0035247385&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(00)00542-7

DO - 10.1016/S0379-6779(00)00542-7

M3 - Article

AN - SCOPUS:0035247385

SN - 0379-6779

VL - 117

SP - 81

EP - 86

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

ER -

Growth mechanism of vertically aligned carbon nanotubes on silicon substrates

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this