Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(1 0 0) substrate

Y. K. Noh, S. R. Park, M. D. Kim, Y. J. Kwon, J. E. Oh, Y. H. Kim, J. Y. Lee, S. G. Kim, K. S. Chung, T. G. Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The growth of AlSb quantum dots (QDs) on Si(1 0 0) substrates by molecular beam epitaxy (MBE) was investigated using reflection high-energy electron diffraction and atomic force microscopy (AFM), with varying the growth rate and Sb4/Al flux ratio. The thickness of the AlSb wetting layer (WL) was found to be independent of the Sb4/Al flux ratio and AlSb growth rate. At 540 °C, the thickness of the AlSb WL was about 0.3 monolayer regardless of the growth rate and flux ratio. AFM images showed that the size and density of AlSb QDs strongly depended on the growth rate and flux ratio. These results provide important information on the formation process of AlSb QDs on Si substrates.

Original languageEnglish
Pages (from-to)244-247
Number of pages4
JournalJournal of Crystal Growth
Issue numberSPEC. ISS.
Publication statusPublished - 2007 Apr

Bibliographical note

Funding Information:
This work was supported by the Basic Research Program of the Korea Science & Engineering Foundation (Grant No. R01-2006-000-10874-0/M10503000169-06M0300-16900), and the Terabit Nano Device (TND) of Frontier-21 program sponsored by the Korea Ministry of Science and Technology, and was partially supported by the Quantum Functional Semiconductor Research Center at Dongguk University.


  • A1. Atomic force microscopy
  • A1. Reflection high-energy electron diffraction
  • A3. Molecular beam epitaxy
  • B1. Antimonides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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