Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells

Jae Sung Hur; Jihye Kim; Samseok Jang; Jung Bin Song; Dongjin Byun; Chang Sik Son; Jae Ho Yun; Kyung Hoon Yoon

doi:10.3938/jkps.53.442

Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells

Jae Sung Hur, Jihye Kim, Samseok Jang, Jung Bin Song, Dongjin Byun, Chang Sik Son, Jae Ho Yun, Kyung Hoon Yoon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The cell performance of CuIn₁-x Ga_x Se₂ (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B₂O₃. Its resistivity was 1.36 × 10^-2 Ω·cm and its transmittance was 85 ∼ 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.

Original language	English
Pages (from-to)	442-445
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	53
Issue number	1
DOIs	https://doi.org/10.3938/jkps.53.442
Publication status	Published - 2008 Jul

Keywords

B-doped ZnO
CIGS solar cell
Transparent conductive oxide (TCO)

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3938/jkps.53.442

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@article{4bfffc4587cc4dc88fe3501237e8f4cb,

title = "Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells",

abstract = "The cell performance of CuIn1-x Gax Se2 (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 × 10-2 Ω·cm and its transmittance was 85 ∼ 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.",

keywords = "B-doped ZnO, CIGS solar cell, Transparent conductive oxide (TCO)",

author = "Hur, {Jae Sung} and Jihye Kim and Samseok Jang and Song, {Jung Bin} and Dongjin Byun and Son, {Chang Sik} and Yun, {Jae Ho} and Yoon, {Kyung Hoon}",

year = "2008",

month = jul,

doi = "10.3938/jkps.53.442",

language = "English",

volume = "53",

pages = "442--445",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}

TY - JOUR

T1 - Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells

AU - Hur, Jae Sung

AU - Kim, Jihye

AU - Jang, Samseok

AU - Song, Jung Bin

AU - Byun, Dongjin

AU - Son, Chang Sik

AU - Yun, Jae Ho

AU - Yoon, Kyung Hoon

PY - 2008/7

Y1 - 2008/7

N2 - The cell performance of CuIn1-x Gax Se2 (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 × 10-2 Ω·cm and its transmittance was 85 ∼ 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.

AB - The cell performance of CuIn1-x Gax Se2 (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 × 10-2 Ω·cm and its transmittance was 85 ∼ 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.

KW - B-doped ZnO

KW - CIGS solar cell

KW - Transparent conductive oxide (TCO)

UR - http://www.scopus.com/inward/record.url?scp=49649099284&partnerID=8YFLogxK

U2 - 10.3938/jkps.53.442

DO - 10.3938/jkps.53.442

M3 - Article

AN - SCOPUS:49649099284

SN - 0374-4884

VL - 53

SP - 442

EP - 445

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Growth of Boron-doped-ZnO by RF magnetron sputtering for CIGS solar cells

Abstract

Keywords

ASJC Scopus subject areas

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