Abstract
The cell performance of CuIn1-x Gax Se2 (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 × 10-2 Ω·cm and its transmittance was 85 ∼ 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.
Original language | English |
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Pages (from-to) | 442-445 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 53 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2008 Jul |
Keywords
- B-doped ZnO
- CIGS solar cell
- Transparent conductive oxide (TCO)
ASJC Scopus subject areas
- Physics and Astronomy(all)