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Growth of buried SiO
2
layers in Si by thermal oxidation: Thermodynamic model
U. Gösele, E. Schroer,
J. Y. Huh
Research output
:
Contribution to journal
›
Article
›
peer-review
20
Citations (Scopus)
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2
layers in Si by thermal oxidation: Thermodynamic model'. Together they form a unique fingerprint.
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Physics & Astronomy
oxidation
100%
thermodynamics
92%
silicon
73%
interstitials
58%
oxides
42%
supersaturation
38%
solubility
30%
insulators
25%
oxygen
20%