Growth of CdTexSe1-x from a Te-rich solution for applications in radiation detection

U. N. Roy, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, K. Lee, M. Marshall, G. Yang, R. B. James

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


We grew CdTexSe1-x (CTS) crystals from a Te-rich solution by using the traveling heater method (THM). The average size distribution and concentration of Te inclusions/precipitates in these as-grown samples were measured to be ~7×104 cm-3, which is much lower than values typical for the present state-of-the-art commercial CdZnTe (CZT) material. Their low-temperature photoluminescence measurement indicates high quality of the material; however the resistivity obtained via I-V curve measurements was ~5×108 Ω-cm, which is low in comparison to that required for gamma detectors. A well-resolved alpha response peak can be detected for both planar- and hemispherical detector geometry. The (μτ)e value for our as-grown sample at room temperature was found to be ~4×10-3 cm2/V.

Original languageEnglish
Pages (from-to)43-46
Number of pages4
JournalJournal of Crystal Growth
Publication statusPublished - 2014
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the U.S. Department of Energy , Office of Defense Nuclear Nonproliferation Research and development, DNN R&D. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract no. DE-AC02-98CH10886 with the U.S. Department of Energy.


  • A1. Characterization
  • A1. Defects
  • A1. Te-inclusions
  • A2. THM
  • B2. CdTeSe
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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