Growth of CdTexSe1-x from a Te-rich solution for applications in radiation detection

U. N. Roy; A. E. Bolotnikov; G. S. Camarda; Y. Cui; A. Hossain; K. Lee; M. Marshall; G. Yang; R. B. James

doi:10.1016/j.jcrysgro.2013.09.039

Growth of CdTe_xSe_1-x from a Te-rich solution for applications in radiation detection

U. N. Roy, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, K. Lee, M. Marshall, G. Yang, R. B. James

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We grew CdTe_xSe_1-x (CTS) crystals from a Te-rich solution by using the traveling heater method (THM). The average size distribution and concentration of Te inclusions/precipitates in these as-grown samples were measured to be ~7×10⁴ cm^-3, which is much lower than values typical for the present state-of-the-art commercial CdZnTe (CZT) material. Their low-temperature photoluminescence measurement indicates high quality of the material; however the resistivity obtained via I-V curve measurements was ~5×10⁸ Ω-cm, which is low in comparison to that required for gamma detectors. A well-resolved alpha response peak can be detected for both planar- and hemispherical detector geometry. The (μτ)_e value for our as-grown sample at room temperature was found to be ~4×10^-3 cm²/V.

Original language	English
Pages (from-to)	43-46
Number of pages	4
Journal	Journal of Crystal Growth
Volume	386
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.09.039
Publication status	Published - 2014
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the U.S. Department of Energy , Office of Defense Nuclear Nonproliferation Research and development, DNN R&D. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract no. DE-AC02-98CH10886 with the U.S. Department of Energy.

Keywords

A1. Characterization
A1. Defects
A1. Te-inclusions
A2. THM
B2. CdTeSe
B2. Semiconducting II-VI materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2013.09.039

Cite this

@article{2cf64220655f47c0b5efdabc7030acac,

title = "Growth of CdTexSe1-x from a Te-rich solution for applications in radiation detection",

abstract = "We grew CdTexSe1-x (CTS) crystals from a Te-rich solution by using the traveling heater method (THM). The average size distribution and concentration of Te inclusions/precipitates in these as-grown samples were measured to be ~7×104 cm-3, which is much lower than values typical for the present state-of-the-art commercial CdZnTe (CZT) material. Their low-temperature photoluminescence measurement indicates high quality of the material; however the resistivity obtained via I-V curve measurements was ~5×108 Ω-cm, which is low in comparison to that required for gamma detectors. A well-resolved alpha response peak can be detected for both planar- and hemispherical detector geometry. The (μτ)e value for our as-grown sample at room temperature was found to be ~4×10-3 cm2/V.",

keywords = "A1. Characterization, A1. Defects, A1. Te-inclusions, A2. THM, B2. CdTeSe, B2. Semiconducting II-VI materials",

author = "Roy, {U. N.} and Bolotnikov, {A. E.} and Camarda, {G. S.} and Y. Cui and A. Hossain and K. Lee and M. Marshall and G. Yang and James, {R. B.}",

note = "Funding Information: This work was supported by the U.S. Department of Energy , Office of Defense Nuclear Nonproliferation Research and development, DNN R&D. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract no. DE-AC02-98CH10886 with the U.S. Department of Energy.",

year = "2014",

doi = "10.1016/j.jcrysgro.2013.09.039",

language = "English",

volume = "386",

pages = "43--46",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Growth of CdTexSe1-x from a Te-rich solution for applications in radiation detection

AU - Roy, U. N.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Cui, Y.

AU - Hossain, A.

AU - Lee, K.

AU - Marshall, M.

AU - Yang, G.

AU - James, R. B.

N1 - Funding Information: This work was supported by the U.S. Department of Energy , Office of Defense Nuclear Nonproliferation Research and development, DNN R&D. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract no. DE-AC02-98CH10886 with the U.S. Department of Energy.

PY - 2014

Y1 - 2014

N2 - We grew CdTexSe1-x (CTS) crystals from a Te-rich solution by using the traveling heater method (THM). The average size distribution and concentration of Te inclusions/precipitates in these as-grown samples were measured to be ~7×104 cm-3, which is much lower than values typical for the present state-of-the-art commercial CdZnTe (CZT) material. Their low-temperature photoluminescence measurement indicates high quality of the material; however the resistivity obtained via I-V curve measurements was ~5×108 Ω-cm, which is low in comparison to that required for gamma detectors. A well-resolved alpha response peak can be detected for both planar- and hemispherical detector geometry. The (μτ)e value for our as-grown sample at room temperature was found to be ~4×10-3 cm2/V.

AB - We grew CdTexSe1-x (CTS) crystals from a Te-rich solution by using the traveling heater method (THM). The average size distribution and concentration of Te inclusions/precipitates in these as-grown samples were measured to be ~7×104 cm-3, which is much lower than values typical for the present state-of-the-art commercial CdZnTe (CZT) material. Their low-temperature photoluminescence measurement indicates high quality of the material; however the resistivity obtained via I-V curve measurements was ~5×108 Ω-cm, which is low in comparison to that required for gamma detectors. A well-resolved alpha response peak can be detected for both planar- and hemispherical detector geometry. The (μτ)e value for our as-grown sample at room temperature was found to be ~4×10-3 cm2/V.

KW - A1. Characterization

KW - A1. Defects

KW - A1. Te-inclusions

KW - A2. THM

KW - B2. CdTeSe

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=84886266113&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.09.039

DO - 10.1016/j.jcrysgro.2013.09.039

M3 - Article

AN - SCOPUS:84886266113

SN - 0022-0248

VL - 386

SP - 43

EP - 46

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -