Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy

Y. Zhao; C. W. Tu; I. T. Bae; T. Y. Seong

doi:10.1063/1.124100

Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy

Y. Zhao, C. W. Tu, I. T. Bae, T. Y. Seong

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The influence of P on the molecular beam epitaxial growth of cubic GaN on wurtzite GaN-on-sapphire substrates was examined. P impingement on a GaN surface induced the growth toward zinc-blende crystallization with the (111) orientation along the basal plane direction. The growth temperature played a critical role on crystallinity and P incorporation in the grown films.

Original language	English
Pages (from-to)	3182-3184
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	21
DOIs	https://doi.org/10.1063/1.124100
Publication status	Published - 1999 May 24
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.124100

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title = "Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy",

abstract = "The influence of P on the molecular beam epitaxial growth of cubic GaN on wurtzite GaN-on-sapphire substrates was examined. P impingement on a GaN surface induced the growth toward zinc-blende crystallization with the (111) orientation along the basal plane direction. The growth temperature played a critical role on crystallinity and P incorporation in the grown films.",

author = "Y. Zhao and Tu, {C. W.} and Bae, {I. T.} and Seong, {T. Y.}",

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AU - Bae, I. T.

AU - Seong, T. Y.

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Y1 - 1999/5/24

N2 - The influence of P on the molecular beam epitaxial growth of cubic GaN on wurtzite GaN-on-sapphire substrates was examined. P impingement on a GaN surface induced the growth toward zinc-blende crystallization with the (111) orientation along the basal plane direction. The growth temperature played a critical role on crystallinity and P incorporation in the grown films.

AB - The influence of P on the molecular beam epitaxial growth of cubic GaN on wurtzite GaN-on-sapphire substrates was examined. P impingement on a GaN surface induced the growth toward zinc-blende crystallization with the (111) orientation along the basal plane direction. The growth temperature played a critical role on crystallinity and P incorporation in the grown films.

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Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy

Abstract

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