Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy

Y. Zhao, C. W. Tu, I. T. Bae, T. Y. Seong

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


The influence of P on the molecular beam epitaxial growth of cubic GaN on wurtzite GaN-on-sapphire substrates was examined. P impingement on a GaN surface induced the growth toward zinc-blende crystallization with the (111) orientation along the basal plane direction. The growth temperature played a critical role on crystallinity and P incorporation in the grown films.

Original languageEnglish
Pages (from-to)3182-3184
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 1999 May 24
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this