This study investigated the molecular beam epitaxy (MBE) growth conditions of strain-balanced (SB) In0.669GaAs/In0.362AlAs superlattices (SLs) for SB quantum cascade lasers (QCLs). The growth modes and properties of SB SLs are strongly affected by the growth conditions. The properties of the SB SLs were evaluated using atomic force microscopy (AFM) and high-resolution X-ray diffraction (HRXRD) analysis. Following the establishment of optimized conditions for SB SLs growth, SB QCL were grown. The HRXRD analysis and transmission electron microscopy (TEM) measurements showed that the grown samples exhibited abrupt interfaces and good structural quality. An epitaxial wafer was processed into a Fabry-Perot cavity with a ridge structure. The device operated in pulsed mode emitting ∼4.7 µm at room temperature with a peak power of 650 mW and a slope efficiency of 870 mW/A.
Bibliographical noteFunding Information:
This work was partially supported by the Materials Innovation Project funded by the National Research Foundation of Korea ( 2020M3H4A3081664 ) and by the R&D program (2E32541) funded by Korea Institute of Science and Technology (KIST).
© 2023 Elsevier B.V.
- A3. Molecular beam epitaxy
- A3. Superlattices
- B2. Semiconducting III-V materials
- B3. Quantum cascade lasers
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry