Growth of InGaAs/InAlAs superlattices for strain balanced quantum cascade lasers by molecular beam epitaxy

Won Jun Lee, Won Bae Sohn, Jae Cheol Shin, Il Ki Han, Tae Geun Kim, Joon Hyun Kang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

This study investigated the molecular beam epitaxy (MBE) growth conditions of strain-balanced (SB) In0.669GaAs/In0.362AlAs superlattices (SLs) for SB quantum cascade lasers (QCLs). The growth modes and properties of SB SLs are strongly affected by the growth conditions. The properties of the SB SLs were evaluated using atomic force microscopy (AFM) and high-resolution X-ray diffraction (HRXRD) analysis. Following the establishment of optimized conditions for SB SLs growth, SB QCL were grown. The HRXRD analysis and transmission electron microscopy (TEM) measurements showed that the grown samples exhibited abrupt interfaces and good structural quality. An epitaxial wafer was processed into a Fabry-Perot cavity with a ridge structure. The device operated in pulsed mode emitting ∼4.7 µm at room temperature with a peak power of 650 mW and a slope efficiency of 870 mW/A.

Original languageEnglish
Article number127233
JournalJournal of Crystal Growth
Volume614
DOIs
Publication statusPublished - 2023 Jul 15

Bibliographical note

Funding Information:
This work was partially supported by the Materials Innovation Project funded by the National Research Foundation of Korea ( 2020M3H4A3081664 ) and by the R&D program (2E32541) funded by Korea Institute of Science and Technology (KIST).

Publisher Copyright:
© 2023 Elsevier B.V.

Keywords

  • A3. Molecular beam epitaxy
  • A3. Superlattices
  • B2. Semiconducting III-V materials
  • B3. Quantum cascade lasers

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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