Growth of InGaAs/InAlAs superlattices for strain balanced quantum cascade lasers by molecular beam epitaxy

Won Jun Lee; Won Bae Sohn; Jae Cheol Shin; Il Ki Han; Tae Geun Kim; Joon Hyun Kang

doi:10.1016/j.jcrysgro.2023.127233

Growth of InGaAs/InAlAs superlattices for strain balanced quantum cascade lasers by molecular beam epitaxy

Won Jun Lee
, Won Bae Sohn
, Jae Cheol Shin
, Il Ki Han
, Tae Geun Kim^*
, Joon Hyun Kang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This study investigated the molecular beam epitaxy (MBE) growth conditions of strain-balanced (SB) In_0.669GaAs/In_0.362AlAs superlattices (SLs) for SB quantum cascade lasers (QCLs). The growth modes and properties of SB SLs are strongly affected by the growth conditions. The properties of the SB SLs were evaluated using atomic force microscopy (AFM) and high-resolution X-ray diffraction (HRXRD) analysis. Following the establishment of optimized conditions for SB SLs growth, SB QCL were grown. The HRXRD analysis and transmission electron microscopy (TEM) measurements showed that the grown samples exhibited abrupt interfaces and good structural quality. An epitaxial wafer was processed into a Fabry-Perot cavity with a ridge structure. The device operated in pulsed mode emitting ∼4.7 µm at room temperature with a peak power of 650 mW and a slope efficiency of 870 mW/A.

Original language	English
Article number	127233
Journal	Journal of Crystal Growth
Volume	614
DOIs	https://doi.org/10.1016/j.jcrysgro.2023.127233
Publication status	Published - 2023 Jul 15

Bibliographical note

Publisher Copyright:
© 2023 Elsevier B.V.

Keywords

A3. Molecular beam epitaxy
A3. Superlattices
B2. Semiconducting III-V materials
B3. Quantum cascade lasers

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2023.127233

Cite this

@article{4de04502f16c4794884dc276b971425c,

title = "Growth of InGaAs/InAlAs superlattices for strain balanced quantum cascade lasers by molecular beam epitaxy",

abstract = "This study investigated the molecular beam epitaxy (MBE) growth conditions of strain-balanced (SB) In0.669GaAs/In0.362AlAs superlattices (SLs) for SB quantum cascade lasers (QCLs). The growth modes and properties of SB SLs are strongly affected by the growth conditions. The properties of the SB SLs were evaluated using atomic force microscopy (AFM) and high-resolution X-ray diffraction (HRXRD) analysis. Following the establishment of optimized conditions for SB SLs growth, SB QCL were grown. The HRXRD analysis and transmission electron microscopy (TEM) measurements showed that the grown samples exhibited abrupt interfaces and good structural quality. An epitaxial wafer was processed into a Fabry-Perot cavity with a ridge structure. The device operated in pulsed mode emitting ∼4.7 µm at room temperature with a peak power of 650 mW and a slope efficiency of 870 mW/A.",

keywords = "A3. Molecular beam epitaxy, A3. Superlattices, B2. Semiconducting III-V materials, B3. Quantum cascade lasers",

author = "Lee, \{Won Jun\} and Sohn, \{Won Bae\} and Shin, \{Jae Cheol\} and Han, \{Il Ki\} and Kim, \{Tae Geun\} and Kang, \{Joon Hyun\}",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = jul,

day = "15",

doi = "10.1016/j.jcrysgro.2023.127233",

language = "English",

volume = "614",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Growth of InGaAs/InAlAs superlattices for strain balanced quantum cascade lasers by molecular beam epitaxy

AU - Lee, Won Jun

AU - Sohn, Won Bae

AU - Shin, Jae Cheol

AU - Han, Il Ki

AU - Kim, Tae Geun

AU - Kang, Joon Hyun

PY - 2023/7/15

Y1 - 2023/7/15

N2 - This study investigated the molecular beam epitaxy (MBE) growth conditions of strain-balanced (SB) In0.669GaAs/In0.362AlAs superlattices (SLs) for SB quantum cascade lasers (QCLs). The growth modes and properties of SB SLs are strongly affected by the growth conditions. The properties of the SB SLs were evaluated using atomic force microscopy (AFM) and high-resolution X-ray diffraction (HRXRD) analysis. Following the establishment of optimized conditions for SB SLs growth, SB QCL were grown. The HRXRD analysis and transmission electron microscopy (TEM) measurements showed that the grown samples exhibited abrupt interfaces and good structural quality. An epitaxial wafer was processed into a Fabry-Perot cavity with a ridge structure. The device operated in pulsed mode emitting ∼4.7 µm at room temperature with a peak power of 650 mW and a slope efficiency of 870 mW/A.

AB - This study investigated the molecular beam epitaxy (MBE) growth conditions of strain-balanced (SB) In0.669GaAs/In0.362AlAs superlattices (SLs) for SB quantum cascade lasers (QCLs). The growth modes and properties of SB SLs are strongly affected by the growth conditions. The properties of the SB SLs were evaluated using atomic force microscopy (AFM) and high-resolution X-ray diffraction (HRXRD) analysis. Following the establishment of optimized conditions for SB SLs growth, SB QCL were grown. The HRXRD analysis and transmission electron microscopy (TEM) measurements showed that the grown samples exhibited abrupt interfaces and good structural quality. An epitaxial wafer was processed into a Fabry-Perot cavity with a ridge structure. The device operated in pulsed mode emitting ∼4.7 µm at room temperature with a peak power of 650 mW and a slope efficiency of 870 mW/A.

KW - A3. Molecular beam epitaxy

KW - A3. Superlattices

KW - B2. Semiconducting III-V materials

KW - B3. Quantum cascade lasers

UR - https://www.scopus.com/pages/publications/85158039492

U2 - 10.1016/j.jcrysgro.2023.127233

DO - 10.1016/j.jcrysgro.2023.127233

M3 - Article

AN - SCOPUS:85158039492

SN - 0022-0248

VL - 614

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 127233

ER -

Growth of InGaAs/InAlAs superlattices for strain balanced quantum cascade lasers by molecular beam epitaxy

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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