Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics

B. P. Gila; B. Luo; J. Kim; R. Mehandru; J. R. Laroche; A. H. Onstine; C. R. Abemathy; F. Ren; S. J. Pearton

Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics

B. P. Gila, B. Luo, J. Kim, R. Mehandru, J. R. Laroche, A. H. Onstine, C. R. Abemathy, F. Ren, S. J. Pearton

Research output: Contribution to conference › Paper › peer-review

Abstract

The substrate preparation of gallium nitride, both ex-situ and in-situ, and the growth of magnesium oxide, MgO, and scandium oxide, 80203, by plasma assisted gas-source molecular beam epitaxy (GSMBE) are presented. These oxides are employed as field passivation of AlGaN/GaN high electron mobility transistor (HEMT) devices and gate dielectrics for test diodes and metal oxide semiconductor HEMTs (MOSHEMTs). Ex-situ cleaning techniques include wet chemical etching and UV-ozone treatments and in-situ techniques include thermal and plasma treatments. Various growth recipes have been explored to produce MgO and Sc ₂O ₃ films with different morphologies and stoichiometry. The end result is a dielectric material with an oxide/nitride interface with low interface trap density and interface stability to allow for inversion to be demonstrated in GaN as well as reduce the current collapse phenomenon to minimum impact on HEMT device operation.

Original language	English
Pages	212-223
Number of pages	12
Publication status	Published - 2003
Externally published	Yes
Event	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: 2003 Oct 12 → 2003 Oct 17

Other

Other	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
Country/Territory	United States
City	Orlando,FL
Period	03/10/12 → 03/10/17

ASJC Scopus subject areas

General Engineering

Cite this

Gila, B. P., Luo, B., Kim, J., Mehandru, R., Laroche, J. R., Onstine, A. H., Abemathy, C. R., Ren, F., & Pearton, S. J. (2003). Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics. 212-223. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics. / Gila, B. P.; Luo, B.; Kim, J. et al.
2003. 212-223 Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Research output: Contribution to conference › Paper › peer-review

Gila, BP, Luo, B, Kim, J, Mehandru, R, Laroche, JR, Onstine, AH, Abemathy, CR, Ren, F & Pearton, SJ 2003, 'Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics', Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 03/10/12 - 03/10/17 pp. 212-223.

Gila BP, Luo B, Kim J, Mehandru R, Laroche JR, Onstine AH et al.. Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics. 2003. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Gila, B. P. ; Luo, B. ; Kim, J. et al. / Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.12 p.

@conference{f26e69bb18de434281dee4c9f08fa1ce,

title = "Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics",

abstract = "The substrate preparation of gallium nitride, both ex-situ and in-situ, and the growth of magnesium oxide, MgO, and scandium oxide, 80203, by plasma assisted gas-source molecular beam epitaxy (GSMBE) are presented. These oxides are employed as field passivation of AlGaN/GaN high electron mobility transistor (HEMT) devices and gate dielectrics for test diodes and metal oxide semiconductor HEMTs (MOSHEMTs). Ex-situ cleaning techniques include wet chemical etching and UV-ozone treatments and in-situ techniques include thermal and plasma treatments. Various growth recipes have been explored to produce MgO and Sc 2O 3 films with different morphologies and stoichiometry. The end result is a dielectric material with an oxide/nitride interface with low interface trap density and interface stability to allow for inversion to be demonstrated in GaN as well as reduce the current collapse phenomenon to minimum impact on HEMT device operation.",

author = "Gila, {B. P.} and B. Luo and J. Kim and R. Mehandru and Laroche, {J. R.} and Onstine, {A. H.} and Abemathy, {C. R.} and F. Ren and Pearton, {S. J.}",

year = "2003",

language = "English",

pages = "212--223",

note = "State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

}

TY - CONF

T1 - Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics

AU - Gila, B. P.

AU - Luo, B.

AU - Kim, J.

AU - Mehandru, R.

AU - Laroche, J. R.

AU - Onstine, A. H.

AU - Abemathy, C. R.

AU - Ren, F.

AU - Pearton, S. J.

PY - 2003

Y1 - 2003

N2 - The substrate preparation of gallium nitride, both ex-situ and in-situ, and the growth of magnesium oxide, MgO, and scandium oxide, 80203, by plasma assisted gas-source molecular beam epitaxy (GSMBE) are presented. These oxides are employed as field passivation of AlGaN/GaN high electron mobility transistor (HEMT) devices and gate dielectrics for test diodes and metal oxide semiconductor HEMTs (MOSHEMTs). Ex-situ cleaning techniques include wet chemical etching and UV-ozone treatments and in-situ techniques include thermal and plasma treatments. Various growth recipes have been explored to produce MgO and Sc 2O 3 films with different morphologies and stoichiometry. The end result is a dielectric material with an oxide/nitride interface with low interface trap density and interface stability to allow for inversion to be demonstrated in GaN as well as reduce the current collapse phenomenon to minimum impact on HEMT device operation.

AB - The substrate preparation of gallium nitride, both ex-situ and in-situ, and the growth of magnesium oxide, MgO, and scandium oxide, 80203, by plasma assisted gas-source molecular beam epitaxy (GSMBE) are presented. These oxides are employed as field passivation of AlGaN/GaN high electron mobility transistor (HEMT) devices and gate dielectrics for test diodes and metal oxide semiconductor HEMTs (MOSHEMTs). Ex-situ cleaning techniques include wet chemical etching and UV-ozone treatments and in-situ techniques include thermal and plasma treatments. Various growth recipes have been explored to produce MgO and Sc 2O 3 films with different morphologies and stoichiometry. The end result is a dielectric material with an oxide/nitride interface with low interface trap density and interface stability to allow for inversion to be demonstrated in GaN as well as reduce the current collapse phenomenon to minimum impact on HEMT device operation.

UR - http://www.scopus.com/inward/record.url?scp=5644304689&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:5644304689

SP - 212

EP - 223

T2 - State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics

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ASJC Scopus subject areas

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