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Growth of MgCaO on GaN
A. H. Onstine
*
, B. P. Gila
, J. Kim
, A. Herrero
, R. Mehandru
, C. R. Abernathy
, F. Ren
, S. J. Pearton
*
Corresponding author for this work
Research output
:
Contribution to conference
›
Paper
›
peer-review
2
Citations (Scopus)
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Keyphrases
MgCaO
100%
Oxides
50%
Sticking Coefficient
50%
Phase Separation
50%
Lattice Constant
50%
Depth Profiling
50%
Radio Frequency
50%
Auger Electron Spectroscopy
50%
Ca Concentration
50%
Oxygen Plasma
50%
Low Growth Rate
50%
Ternary Oxides
50%
Gas Source Molecular Beam Epitaxy
50%
Elemental Metals
50%
Mg-Ca
50%
Equivalent Pressure
50%
Engineering
Deposited Film
100%
Phase Separation
50%
Radio Frequency
50%
Source Gas
50%
Steep Increase
50%
Low Growth Rate
50%
Elemental Metal
50%
Lattice Constant
50%
Material Science
Film
100%
Oxide Compound
66%
X-Ray Diffraction
33%
Molecular Beam Epitaxy
33%
Lattice Constant
33%
Auger Electron Spectroscopy
33%
Surface (Surface Science)
33%
Chemical Engineering
Film
100%
Phase Separation
33%
Gas Source Molecular Beam Epitaxy
33%
Chemical Element
33%