Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition

Min Suk Oh; Sang Ho Kim; Tae Yeon Seong

doi:10.1063/1.2056576

Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition

Min Suk Oh, Sang Ho Kim, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

We report on the growth of nominally undoped p -type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n -type to p -type material when the oxygen pressure changes from 6× 10-5 to 3× 10-4 Torr during growth. TiAu contacts produce ohmic behavior to n -type ZnO (∼ 1017 cm-3), but leaky Schottky behavior to p -type ZnO (∼ 1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

Original language	English
Article number	122103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	12
DOIs	https://doi.org/10.1063/1.2056576
Publication status	Published - 2005 Sept 19

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition",

abstract = "We report on the growth of nominally undoped p -type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n -type to p -type material when the oxygen pressure changes from 6× 10-5 to 3× 10-4 Torr during growth. TiAu contacts produce ohmic behavior to n -type ZnO (∼ 1017 cm-3), but leaky Schottky behavior to p -type ZnO (∼ 1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.",

author = "Oh, {Min Suk} and Kim, {Sang Ho} and Seong, {Tae Yeon}",

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N2 - We report on the growth of nominally undoped p -type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n -type to p -type material when the oxygen pressure changes from 6× 10-5 to 3× 10-4 Torr during growth. TiAu contacts produce ohmic behavior to n -type ZnO (∼ 1017 cm-3), but leaky Schottky behavior to p -type ZnO (∼ 1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

AB - We report on the growth of nominally undoped p -type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n -type to p -type material when the oxygen pressure changes from 6× 10-5 to 3× 10-4 Torr during growth. TiAu contacts produce ohmic behavior to n -type ZnO (∼ 1017 cm-3), but leaky Schottky behavior to p -type ZnO (∼ 1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

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Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition

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