Growth of p-CdTe thin films on n-GaN/sapphire

Younghun Jung; Seunju Chun; Donghwan Kim; Jihyun Kim

doi:10.1016/j.jcrysgro.2011.01.054

Growth of p-CdTe thin films on n-GaN/sapphire

Younghun Jung, Seunju Chun, Donghwan Kim, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl₂ treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl₂ treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.

Original language	English
Pages (from-to)	69-72
Number of pages	4
Journal	Journal of Crystal Growth
Volume	326
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.01.054
Publication status	Published - 2011 Jul 1

Bibliographical note

Funding Information:
This work was supported by New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 20093020010060-12-1-000 ).

Keywords

B1. CdTe
B1. GaN

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.01.054

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title = "Growth of p-CdTe thin films on n-GaN/sapphire",

abstract = "CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.",

keywords = "B1. CdTe, B1. GaN",

author = "Younghun Jung and Seunju Chun and Donghwan Kim and Jihyun Kim",

note = "Funding Information: This work was supported by New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 20093020010060-12-1-000 ). ",

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doi = "10.1016/j.jcrysgro.2011.01.054",

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AU - Jung, Younghun

AU - Chun, Seunju

AU - Kim, Donghwan

AU - Kim, Jihyun

N1 - Funding Information: This work was supported by New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 20093020010060-12-1-000 ).

PY - 2011/7/1

Y1 - 2011/7/1

N2 - CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.

AB - CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.

KW - B1. CdTe

KW - B1. GaN

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Growth of p-CdTe thin films on n-GaN/sapphire

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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