Growth of p-CdTe thin films on n-GaN/sapphire

Younghun Jung, Seunju Chun, Donghwan Kim, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2011 Jul 1

Bibliographical note

Funding Information:
This work was supported by New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 20093020010060-12-1-000 ).


  • B1. CdTe
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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