Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy

Heon Lee; Masaaki Yuri; Tetsuzo Ueda; James S. Harris; Kyusik Sin

doi:10.1007/s11664-997-0271-9

Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy

Heon Lee, Masaaki Yuri, Tetsuzo Ueda, James S. Harris, Kyusik Sin

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

High crystalline quality thick GaN films were grown by vapor phase epitaxy using GaCl₃ and NH₃. The growth rate was in the range of 10∼15 μ/h. GaN films grown at higher temperatures (960∼1020°C) were single crystalline with smooth surface morphologies. No chlorine impurity was incorporated in these films during growth. The best crystalline quality and surface morphology of grown films was achieved by sputtering a thin AlN buffer layer, prior to growth. According to reflection high energy electron diffraction and atomic force microscopy measurements, as-sputtered AlN buffer layer was amorphous with root means square roughness of 0.395 nm and then crystallized during the GaN growth. This improved the GaN growth due to more uniform distribution of GaN nucleation. Rutherford backscattering channeling experiments produced the lowest value from the GaN film grown on a-Al₂O₃ with a 500Å AlN buffer layer at 1020°C.

Original language	English
Pages (from-to)	898-902
Number of pages	5
Journal	Journal of Electronic Materials
Volume	26
Issue number	8
DOIs	https://doi.org/10.1007/s11664-997-0271-9
Publication status	Published - 1997 Aug
Externally published	Yes

Bibliographical note

Funding Information:
ACKNOWLEDGMENTS This work is supported by ARPA and University of New Mexico through the contract No. MDA 972-94-1-0003. The authors would like to thank to Professor Choongun Kim at University of Texas at Arlington for his assistance and useful discussions.

Keywords

AlN buffer layer
GaCl GaN film
Hydride vapor phase epitaxy (HVPE)
Minimum RBS channeling
NH
Rutherford backscattering spectroscopy (RBS)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{ca1534fad10246d38804e7869239bf33,

title = "Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy",

abstract = "High crystalline quality thick GaN films were grown by vapor phase epitaxy using GaCl3 and NH3. The growth rate was in the range of 10∼15 μ/h. GaN films grown at higher temperatures (960∼1020°C) were single crystalline with smooth surface morphologies. No chlorine impurity was incorporated in these films during growth. The best crystalline quality and surface morphology of grown films was achieved by sputtering a thin AlN buffer layer, prior to growth. According to reflection high energy electron diffraction and atomic force microscopy measurements, as-sputtered AlN buffer layer was amorphous with root means square roughness of 0.395 nm and then crystallized during the GaN growth. This improved the GaN growth due to more uniform distribution of GaN nucleation. Rutherford backscattering channeling experiments produced the lowest value from the GaN film grown on a-Al2O3 with a 500{\AA} AlN buffer layer at 1020°C.",

keywords = "AlN buffer layer, GaCl GaN film, Hydride vapor phase epitaxy (HVPE), Minimum RBS channeling, NH, Rutherford backscattering spectroscopy (RBS)",

author = "Heon Lee and Masaaki Yuri and Tetsuzo Ueda and Harris, {James S.} and Kyusik Sin",

note = "Funding Information: ACKNOWLEDGMENTS This work is supported by ARPA and University of New Mexico through the contract No. MDA 972-94-1-0003. The authors would like to thank to Professor Choongun Kim at University of Texas at Arlington for his assistance and useful discussions.",

year = "1997",

month = aug,

doi = "10.1007/s11664-997-0271-9",

language = "English",

volume = "26",

pages = "898--902",

journal = "Journal of Electronic Materials",

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T1 - Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy

AU - Lee, Heon

AU - Yuri, Masaaki

AU - Ueda, Tetsuzo

AU - Harris, James S.

AU - Sin, Kyusik

N1 - Funding Information: ACKNOWLEDGMENTS This work is supported by ARPA and University of New Mexico through the contract No. MDA 972-94-1-0003. The authors would like to thank to Professor Choongun Kim at University of Texas at Arlington for his assistance and useful discussions.

PY - 1997/8

Y1 - 1997/8

N2 - High crystalline quality thick GaN films were grown by vapor phase epitaxy using GaCl3 and NH3. The growth rate was in the range of 10∼15 μ/h. GaN films grown at higher temperatures (960∼1020°C) were single crystalline with smooth surface morphologies. No chlorine impurity was incorporated in these films during growth. The best crystalline quality and surface morphology of grown films was achieved by sputtering a thin AlN buffer layer, prior to growth. According to reflection high energy electron diffraction and atomic force microscopy measurements, as-sputtered AlN buffer layer was amorphous with root means square roughness of 0.395 nm and then crystallized during the GaN growth. This improved the GaN growth due to more uniform distribution of GaN nucleation. Rutherford backscattering channeling experiments produced the lowest value from the GaN film grown on a-Al2O3 with a 500Å AlN buffer layer at 1020°C.

AB - High crystalline quality thick GaN films were grown by vapor phase epitaxy using GaCl3 and NH3. The growth rate was in the range of 10∼15 μ/h. GaN films grown at higher temperatures (960∼1020°C) were single crystalline with smooth surface morphologies. No chlorine impurity was incorporated in these films during growth. The best crystalline quality and surface morphology of grown films was achieved by sputtering a thin AlN buffer layer, prior to growth. According to reflection high energy electron diffraction and atomic force microscopy measurements, as-sputtered AlN buffer layer was amorphous with root means square roughness of 0.395 nm and then crystallized during the GaN growth. This improved the GaN growth due to more uniform distribution of GaN nucleation. Rutherford backscattering channeling experiments produced the lowest value from the GaN film grown on a-Al2O3 with a 500Å AlN buffer layer at 1020°C.

KW - AlN buffer layer

KW - GaCl GaN film

KW - Hydride vapor phase epitaxy (HVPE)

KW - Minimum RBS channeling

KW - NH

KW - Rutherford backscattering spectroscopy (RBS)

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Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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