Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy

Heon Lee, Masaaki Yuri, Tetsuzo Ueda, James S. Harris, Kyusik Sin

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


High crystalline quality thick GaN films were grown by vapor phase epitaxy using GaCl3 and NH3. The growth rate was in the range of 10∼15 μ/h. GaN films grown at higher temperatures (960∼1020°C) were single crystalline with smooth surface morphologies. No chlorine impurity was incorporated in these films during growth. The best crystalline quality and surface morphology of grown films was achieved by sputtering a thin AlN buffer layer, prior to growth. According to reflection high energy electron diffraction and atomic force microscopy measurements, as-sputtered AlN buffer layer was amorphous with root means square roughness of 0.395 nm and then crystallized during the GaN growth. This improved the GaN growth due to more uniform distribution of GaN nucleation. Rutherford backscattering channeling experiments produced the lowest value from the GaN film grown on a-Al2O3 with a 500Å AlN buffer layer at 1020°C.

Original languageEnglish
Pages (from-to)898-902
Number of pages5
JournalJournal of Electronic Materials
Issue number8
Publication statusPublished - 1997 Aug
Externally publishedYes

Bibliographical note

Funding Information:
ACKNOWLEDGMENTS This work is supported by ARPA and University of New Mexico through the contract No. MDA 972-94-1-0003. The authors would like to thank to Professor Choongun Kim at University of Texas at Arlington for his assistance and useful discussions.


  • AlN buffer layer
  • GaCl GaN film
  • Hydride vapor phase epitaxy (HVPE)
  • Minimum RBS channeling
  • NH
  • Rutherford backscattering spectroscopy (RBS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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