Abstract
We have synthesized vertically aligned carbon nanotube (CNT) emitters on iron-deposited trenches by thermal chemical vapor deposition of acetylene gas for field emission applications. The trenches patterned with various shapes and sizes were fabricated on silicon oxide/silicon substrates using a conventional lithography method and lift-off process. The vertically well-aligned carbon nanotubes were selectively grown only on iron-deposited trenches. The alignment, selectivity, and structure of carbon nanotube emitters grown on the patterned silicon trenches with various shapes and sizes are investigated. Field emission properties such as turn-on voltage and the emission current are also characterized.
Original language | English |
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Pages (from-to) | 267-270 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 475 |
Issue number | 1-2 SPEC. ISS. |
DOIs | |
Publication status | Published - 2005 Mar 22 |
Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by grant no. R-11-2000-086-0000-0 from the Center of Excellency Program of the Korea Science and Engineering Foundation and Ministry of Science and Technology.
Keywords
- Aligned growth
- Carbon nanotube
- Field emission
- Patterned trench
- Thermal chemical vapor deposition
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry