Growth of vertically aligned carbon nanotube emitters on patterned silicon trenches for field emission applications

Yoon Huh, Jeong Yong Lee, Cheol Jin Lee

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

We have synthesized vertically aligned carbon nanotube (CNT) emitters on iron-deposited trenches by thermal chemical vapor deposition of acetylene gas for field emission applications. The trenches patterned with various shapes and sizes were fabricated on silicon oxide/silicon substrates using a conventional lithography method and lift-off process. The vertically well-aligned carbon nanotubes were selectively grown only on iron-deposited trenches. The alignment, selectivity, and structure of carbon nanotube emitters grown on the patterned silicon trenches with various shapes and sizes are investigated. Field emission properties such as turn-on voltage and the emission current are also characterized.

Original languageEnglish
Pages (from-to)267-270
Number of pages4
JournalThin Solid Films
Volume475
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2005 Mar 22
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by grant no. R-11-2000-086-0000-0 from the Center of Excellency Program of the Korea Science and Engineering Foundation and Ministry of Science and Technology.

Keywords

  • Aligned growth
  • Carbon nanotube
  • Field emission
  • Patterned trench
  • Thermal chemical vapor deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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